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High Purity Tantalum Sputtering Target, 99.99%
Product Type: Round planar sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What thickness and diameter options are available for the 99.99% tantalum sputtering target?
The round planar target is available in thicknesses of 3 mm, 4 mm, 5 mm, 6 mm, and 6.35 mm, and diameters including 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80.0 mm, 100 mm, and 101.6 mm. The typical dimensional tolerance is ±0.10 mm for both diameter and thickness, so chamber fit and cathode compatibility should be confirmed before quotation.
What purity, impurity, density, and resistivity specifications are provided for this tantalum target?
The target is specified as 99.99% purity with material grade Ta 3N5 and a typical total critical impurity limit of ≤100 ppm. It has a density of 16.69 g/cm³ and an electrical resistivity of 13.1 micro-ohm cm, supporting barrier layer, electronic device, high-temperature film, and magnetron sputtering applications.
Is the tantalum sputtering target supplied bonded or unbonded?
The target is listed as unbonded, with optional Cu backing plate bonding available. Unbonded targets require the user or integrator to manage mounting or bonding to the sputtering cathode, while the optional Cu backing provides a factory-bonded configuration. The bonding choice should be confirmed with the technical sales team before quotation.
Round planar 99.99% tantalum sputtering target with 16.69 g/cm3 density, 13.1 micro-ohm cm resistivity, and Ra<=1.6 um surfaces, available in 3-6.35 mm thicknesses and 25.4-101.6 mm diameters. The unbonded default requires explicit backing-plate bonding or clamping for magnetron sputtering of barrier layers and high-temperature films.
Positive
- Controlled high-purity tantalum grade: 99.99% purity with typical total critical impurities <=100 ppm limits uncontrolled dopant contribution during sputtering of barrier layers and electronic-device films.
- Predictable physical sputtering properties: Density of 16.69 g/cm3 and electrical resistivity of 13.1 micro-ohm cm provide a defined material basis for magnetron sputtering process development and high-temperature film deposition.
Trade-offs
- Unbonded default requires mounting decision: The target is supplied unbonded unless Cu backing plate bonding is specified, so the user must provide clamping or arrange bonding before installation in a magnetron sputtering system.
- Typical tolerances need pre-order confirmation: Ra<=1.6 um surface finish, +/-0.10 mm dimensional tolerance, and final parameters are typical values confirmed by batch inspection and the agreed configuration, requiring specification review before quotation.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
