AlCuSi Sputtering Target 99.999% 4 in × 0.25 in ATOMFAIR®

$1,085.00

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AlCuSi (98:1:1) metal alloy sputtering target, 99.999% purity and 4 in × 0.25 in size, for DC/RF magnetron deposition. Order now.

Aluminum-Copper-Silicon Alloy Sputtering Target (AlCuSi (98:1:1))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Copper-Silicon Alloy Sputtering Target (AlCuSi (98:1:1)) combines the AlCuSi (98:1:1) alloy composition with a source-listed purity of 99.999% and a target size of 4 indiameter x 0.25 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlCuSi alloy with 98:1:1 at% composition ratio, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.999% (5N) purity with total metallic impurities <10 ppm and O+N <10 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALCS
Material / Formula AlCuSi (98:1:1)
Purity 99.999%
Target Size 4 indiameter x 0.25 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

The target requires operation within specified DC/RF power density and argon pressure ranges to achieve stoichiometric transfer and uniform film thickness. Adhesion exceeding 15 MPa depends on proper substrate preparation, and total impurities below 10 ppm ensure minimal film contamination.

  • Operating Parameters: Maintain DC power between 3-15 W/cm² or RF power between 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere for optimal deposition.
  • Substrate Preparation: Prepare substrates adequately to achieve adhesion strength greater than 15 MPa as per ASTM D4541 pull-off standard.
  • Purity Control: Keep total metallic impurities and oxygen/nitrogen content below 10 ppm each to avoid film contamination.
  • Thickness Uniformity: Expect thickness uniformity within ±5% across a 100 mm substrate under the recommended sputtering conditions.
  • Bonding and Backing: Select indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate for compatibility with the sputtering system's cooling and mounting requirements.

What deposition rate and thickness uniformity can be achieved with the AlCuSi (98:1:1) sputtering target under DC or RF magnetron sputtering?

Under optimized conditions, the target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate when operated at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) in a 0.5–2.0 Pa Ar atmosphere.

What are the maximum power density limits for the AlCuSi (98:1:1) target to avoid damage during sputtering?

For DC magnetron sputtering, the maximum power density is 15 W/cm²; for RF sputtering, it is 5 W/cm². Operating within these recommended ranges (DC: 3–15 W/cm², RF: 1–5 W/cm²) ensures stable deposition and minimizes risk of target cracking or excessive heating.

What is the purity and impurity specification of the AlCuSi (98:1:1) sputtering target, and how does it affect film contamination?

The target is supplied at 99.999% (5N) purity with total metallic impurities <10 ppm and O+N <10 ppm. This high purity level minimizes contamination in deposited films, making the target suitable for interconnect metallization, diffusion barrier layers, and optical reflector coatings.

The AlCuSi (98:1:1) sputtering target with 99.999% purity and ≤50 µm grain size is engineered for stoichiometric film transfer in DC/RF magnetron sputtering, delivering ±5% thickness uniformity on 100 mm substrates at 10-80 nm/min, but requires optimized power density and bonding selection to manage thermal and adhesion constraints.

Positive

  • High-purity 5N alloy composition: 99.999% purity with total metallic impurities <10 ppm and O+N <10 ppm minimizes contamination, improving deposited film resistivity and adhesion for interconnect and barrier layer applications.
  • Fine-grained microstructure for uniformity: Grain size ≤50 µm and relative density ≥95% of theoretical support consistent sputtering behavior and ±5% thickness uniformity across 100 mm substrates under optimized conditions.

Trade-offs

  • Narrow power density operating window: Optimal sputtering requires 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar; exceeding these limits risks target cracking or non-stoichiometric film transfer.
  • Bonding and backing plate dependency: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional but must be matched to deposition system thermal load; incorrect selection can cause delamination or thermal runaway.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).