Al3Ni Aluminum-Nickel Sputtering Target 99.9% 2in, ATOMFAIR®

$380.00

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Research-grade Al3Ni sputtering target with 99.9% purity, 2 in diameter × 0.25 in size, ≥95% density and Ra ≤0.8 μm finish for DC/RF use. Order now.

Aluminum-Nickel Alloy Sputtering Target (Al3Ni)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Nickel Alloy Sputtering Target (Al3Ni) combines the Al3Ni alloy composition with a source-listed purity of 99.9% and a target size of 2indiameterx 0.25in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • Al3Ni alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-AL3S
Material / Formula Al3Ni
Purity 99.9%
Target Size 2indiameterx 0.25in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires operation within specified DC/RF power density and argon pressure ranges to achieve stoichiometric transfer and adhesion performance. Bonding type and backing plate must be selected for compatibility with the deposition system and thermal management requirements.

  • Power Density Constraints: Operate the target at DC power densities of 3-15 W/cm² or RF power densities of 1-5 W/cm² to avoid overheating or insufficient sputter yield.
  • Argon Atmosphere: Maintain an argon working pressure between 0.5 and 2.0 Pa during sputtering to sustain stable plasma and achieve uniform film deposition.
  • Bonding Compatibility: Select indium bonding for high thermal conductivity or elastomer bonding for lower-temperature applications, ensuring compatibility with the target holder.
  • Substrate Preparation: Prepare substrates to achieve adhesion strength greater than 15 MPa per ASTM D4541, requiring clean and properly activated surfaces.
  • Thickness Uniformity: Expect ±5% thickness uniformity across a 100 mm substrate under optimized deposition parameters, verifying with profilometry or ellipsometry.

How does the 99.9% purity and sub-200 ppm oxygen+nitrogen level of the Al3Ni sputtering target impact film resistivity and adhesion in interconnect metallization?

The target's 99.9% purity with total metallic impurities <1000 ppm and combined O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion. Under optimized sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) at 0.5-2.0 Pa Ar, films achieve adhesion >15 MPa per ASTM D4541 on properly prepared substrates.

What bonding and backing plate options are available for the Al3Ni target to ensure compatibility with standard magnetron sputter guns?

The target supports indium or elastomer bonding as optional choices, with backing plates available in oxygen-free copper or CuCrZr. These options allow users to match thermal conductivity and mechanical requirements of their specific sputtering system. The target's 2-inch diameter and 0.25-inch thickness are standard sizes for many sputter guns.

What are the recommended DC and RF magnetron sputtering parameters for achieving ±5% thickness uniformity across a 100 mm substrate with the Al3Ni target?

For DC sputtering, use 3-15 W/cm² power density; for RF, use 1-5 W/cm², both under 0.5-2.0 Pa Ar atmosphere. Under these conditions, deposition rates of 10-80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate.

The Al3Ni sputtering target offers 99.9% purity with total metallic impurities below 1000 ppm and O+N below 200 ppm, enabling stoichiometric film deposition at rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, suitable for interconnect metallization, diffusion barriers, and optical reflector coatings.

Positive

  • High Purity and Controlled Impurities: 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
  • Optimized Deposition Performance: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar yields 10-80 nm/min deposition rate with ±5% thickness uniformity on 100 mm substrates.

Trade-offs

  • Bonding and Backing Plate Options Require Specification: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional; must be selected based on deposition system compatibility and thermal management requirements.
  • Sensitivity to Substrate Preparation: Adhesion strength >15 MPa (ASTM D4541 pull-off) requires properly prepared substrates; otherwise film adhesion may be compromised.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).