AlCrCu 99.99% Sputtering Target 2 in x 0.125 in ATOMFAIR®

$240.00

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Research-grade AlCrCu sputtering target, 99.99% purity, 2 in x 0.125 in, for DC/RF magnetron sputtering and vacuum coating in research workflows. Order now.

Aluminum-Chromium-Copper Alloy Sputtering Target (AlCrCu)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Chromium-Copper Alloy Sputtering Target (AlCrCu) combines the AlCrCu alloy composition with a source-listed purity of 99.99% and a target size of 2 indiameter x 0.125 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlCrCu alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALCS
Material / Formula AlCrCu
Purity 99.99%
Target Size 2 indiameter x 0.125 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires operation under controlled DC/RF power density and argon atmosphere within a vacuum deposition system. Bonding and backing plate selection must match the deposition system to ensure thermal management and film uniformity.

  • Sputtering Parameters: Operate the target at DC power density 3-15 W/cm² or RF power density 1-5 W/cm² under an Ar atmosphere of 0.5-2.0 Pa to achieve deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Bonding and Backing: Bond the target using indium or elastomer bonding to an oxygen-free copper or CuCrZr backing plate to ensure thermal and electrical contact during sputtering.
  • Surface Preparation: Maintain a machined surface finish with Ra ≤ 0.8 µm and relative density ≥95% of theoretical to minimize arcing and particle generation during deposition.
  • Purity Control: Use the 99.99% purity target with total metallic impurities less than 100 ppm and oxygen plus nitrogen less than 20 ppm to minimize film contamination.
  • Adhesion and Substrate: Ensure deposited films achieve adhesion strength greater than 15 MPa on properly prepared substrates per ASTM D4541 pull-off test.

How does the grain size of ≤50 µm in the AlCrCu target affect film uniformity and resistivity in DC magnetron sputtering applications?

The fine grain size (≤50 µm) ensures uniform erosion and consistent plasma behavior, contributing to thickness uniformity of ±5% across a 100 mm substrate at deposition rates of 10–80 nm/min under DC sputtering at 3–15 W/cm². This directly minimizes film resistivity variations for interconnect metallization and diffusion barrier layers.

What bonding and backing plate options are available for the AlCrCu sputtering target, and how do they affect thermal management in high-power RF sputtering?

The target offers optional indium bonding or elastomer bonding and backing plates of oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for high-power DC sputtering up to 15 W/cm², while elastomer bonding is suitable for lower-power RF sputtering up to 5 W/cm². The choice impacts heat dissipation and target longevity under continuous deposition.

What surface finish and thickness tolerance are specified for the AlCrCu target, and why are these critical for vacuum sealing and repeatable deposition in a magnetron sputtering system?

The target has a machined surface finish of Ra ≤ 0.8 µm and thickness tolerance of ±0.1 mm. These specifications ensure proper vacuum sealing against the cathode and uniform target-to-substrate spacing, which are critical for maintaining consistent plasma impedance and deposition rate reproducibility across runs.

The AlCrCu sputtering target offers 99.99% purity and ≤50 µm grain size for low-contamination, uniform thin films, but requires careful control of sputtering parameters and bonding selection to achieve optimal performance.

Positive

  • High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm, minimizing contamination in deposited films and improving resistivity and adhesion.
  • Fine grain size and high density: Grain size ≤50 µm and relative density ≥95% of theoretical enable uniform sputtering and dense film formation with reduced particulate generation.

Trade-offs

  • Strict operating parameter window: Optimal stoichiometric transfer (±2 at%) and thickness uniformity (±5%) are achieved only within narrow DC/RF power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa) ranges; deviations may degrade film quality.
  • Bonding and backing plate selection required: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate options must be matched to the deposition system's thermal and mechanical requirements; improper selection can cause thermal management issues during sputtering.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).