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Aluminum-Magnesium Alloy Sputtering Target (AlMg)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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What is the maximum allowable oxygen and nitrogen impurity level in the AlMg sputtering target, and how does it affect film resistivity?
The AlMg target has a total O+N impurity limit of <100 ppm, with total metallic impurities <500 ppm at 99.95% purity. This low O+N content minimizes oxide and nitride formation during sputtering, which helps maintain consistent film resistivity and adhesion in interconnect metallization and diffusion barrier applications.
Can this 3-inch diameter AlMg target be bonded to a backing plate for use in a specific magnetron sputtering system?
Yes, the target supports optional indium bonding or elastomer bonding to an oxygen-free copper or CuCrZr backing plate. You must confirm the bonding type and backing plate material with your deposition system's cooling and mounting requirements before ordering, as these options affect thermal conductivity and mechanical fit.
What deposition rate and thickness uniformity can be expected when sputtering this AlMg target under DC magnetron conditions?
Under DC magnetron sputtering at 3-15 W/cm² and 0.5-2.0 Pa Ar atmosphere, the target achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The fine-grained microstructure (≤50 µm) and ≥95% relative density support stable erosion and consistent film stoichiometry within ±2 at% of the nominal AlMg composition.
This AlMg (Aluminum-Magnesium) alloy sputtering target offers 99.95% purity with low metallic and oxygen/nitrogen impurities, suitable for DC/RF magnetron sputtering in interconnect metallization and optical reflector coatings. The 3-inch diameter, 0.25-inch thick target provides deposition rates of 10-80 nm/min with ±5% uniformity across 100 mm substrates, but requires careful selection of bonding and backing plate options and process parameter optimization.
Positive
- High purity 99.95% with low impurities: Total metallic impurities <500 ppm and O+N <100 ppm minimize contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Specified for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Bonding and backing plate options: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional selections that must be matched to the deposition system to ensure proper thermal management and target integrity.
- Process parameter optimization required: Achieving the stated deposition rate and uniformity depends on tuning power density, pressure, and substrate setup within the recommended ranges, requiring initial calibration.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
