Al-Ta-Zr 33.3:33.3:33.3 Sputtering Target 99.9% ATOMFAIR®

$480.00

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Research-grade AlTaZr 33.3:33.3:33.3 sputtering target with 99.9% purity, ≥97% density, ≤50 μm grain size and Ra ≤0.8 μm finish. Order now.

Aluminum-Tantalum-Zirconium Alloy Sputtering Target (AlTaZr (at% 33.3:33.3:33.3))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum-Tantalum-Zirconium Alloy Sputtering Target (AlTaZr (at% 33.3:33.3:33.3)) combines the AlTaZr (at% 33.3:33.3:33.3) alloy composition with a source-listed purity of 99.9% and a target size of Custom size.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlTaZr alloy with 33.3:33.3:33.3 at% composition ratio, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for diffusion barriers, gate electrodes and high-temperature protective coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALTS
Material / Formula AlTaZr (at% 33.3:33.3:33.3)
Purity 99.9%
Target Size Custom size
Relative Density ≥97% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Powder metallurgy / Vacuum hot pressing
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires deposition under DC/RF magnetron sputtering at 3-15 W/cm² or 1-5 W/cm² in 0.5-2.0 Pa argon atmosphere to achieve stoichiometric transfer and film uniformity. Compatible bonding and backing plate options must be selected based on thermal and mechanical requirements of the deposition system.

  • Deposition Parameters: Optimized sputtering conditions require power density of 3-15 W/cm² DC or 1-5 W/cm² RF and argon pressure of 0.5-2.0 Pa.
  • Adhesion Requirement: Deposited films achieve adhesion strength greater than 15 MPa on properly prepared substrates per ASTM D4541.
  • Contamination Control: Total metallic impurities below 1000 ppm and oxygen plus nitrogen below 200 ppm must be maintained to minimise film contamination.
  • Bonding and Backing Plate: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate options must be confirmed for system compatibility.

What deposition rate and thickness uniformity can be achieved with the AlTaZr sputtering target under typical DC magnetron sputtering conditions?

Under optimized DC sputtering at 3-15 W/cm² and 0.5-2.0 Pa Ar atmosphere, the target achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The fine grain size ≤50 µm and relative density ≥97% of theoretical support consistent erosion and stable deposition rates.

What bonding and backing plate options are available for the AlTaZr target, and how do they influence thermal management during high-power sputtering?

The target offers optional indium bonding or elastomer bonding, with backing plates of oxygen-free copper or CuCrZr. Indium bonding provides superior thermal conductivity for sustained DC sputtering up to 15 W/cm², while elastomer bonding may be suitable for RF sputtering at lower power densities or where vacuum compatibility is prioritized.

What purity and impurity controls are specified for the AlTaZr target, and how do they affect film quality in diffusion barrier applications?

The target has 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination that could degrade barrier performance. The ±2 at% composition tolerance ensures stoichiometric transfer, which is critical for achieving reliable diffusion barrier properties and adhesion strength >15 MPa per ASTM D4541 on prepared substrates.

This AlTaZr (at% 33.3:33.3:33.3) sputtering target offers 99.9% purity with fine-grained microstructure and stoichiometric transfer capability, but requires optimized deposition conditions and optional bonding/backing plate selection for integration into specific magnetron sputtering systems.

Positive

  • Stoichiometric transfer control: The AlTaZr 33.3:33.3:33.3 at% composition ratio enables stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions, ensuring reproducible film composition.
  • High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.

Trade-offs

  • Constrained deposition parameters: Optimal performance is limited to DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, requiring precise process control to achieve stated deposition rates and uniformity.
  • Optional bonding and backing plate: Bonding type (indium/elastomer) and backing plate material (oxygen-free copper/CuCrZr) are optional and must be specified by the buyer, adding a procurement decision step to match the target to the deposition system.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

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