High Purity Silicon Sputtering Target 99.999% ATOMFAIR®

Price range: $90.00 through $200.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

99.999% Si round planar sputtering target, 3–6.35 mm thick and 25.4–101.6 mm diameter, Ra≤1.6 μm typical, vacuum packed with COA.

SKU: AF-MT-S-SILX-N50X-3AEV
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High Purity Silicon Sputtering Target, 99.999%
Product Type: Round planar sputtering target
Research-grade laboratory product
Product Overview

High Purity Silicon Sputtering Target, 99.999% is a round planar sputtering target with 99.999% purity, 2.33 g/cm^3 density and Varies with doping / resistivity grade; Intrinsic SiApprox. 2.3×10^5 ohm cm electrical resistivity for semiconductor films, silicon-based devices, magnetron sputtering.

Available configurations cover thicknesses of 3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm and diameters of 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80.0 mm, 101.6 mm, 100 mm, 80 mm. The listed surface condition, dimensional tolerance and bonding options support configuration review before quotation.

Performance Features
  • 99.999% purity material grade for controlled sputtering workflows.
  • Round planar sputtering target geometry with the listed thickness and diameter options.
  • Surface preparation: Turning / grinding,Ra<=1.6 um (typical).
  • Typical use areas include semiconductor films, silicon-based devices, magnetron sputtering.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-SI-99N999
Purity 99.999%
Material Grade Si 4N5 (intrinsic); Si 4N5 (n-type); Si 4N5 (p-type)
Typical Total Critical Impurities Typical total critical impurities: <=10 ppm
Density 2.33 g/cm^3
Electrical Resistivity Varies with doping / resistivity grade; Intrinsic SiApprox. 2.3×10^5 ohm cm
Surface State Turning / grinding,Ra<=1.6 um (typical)
Dimensional Tolerance Diameter+/-0.10 mm; thickness+/-0.10 mm (typical)
Target Type Round planar sputtering target
Bonding Unbonded; optionalCubacking plate bonding/magnetic shim
Typical Applications semiconductor films, silicon-based devices, magnetron sputtering
Packaging / Notes Vacuum packed with COA; final parameters are confirmed by batch inspection and the agreed configuration.
Available Thicknesses 3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm
Available Diameters 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80.0 mm, 101.6 mm, 100 mm, 80 mm
PROCUREMENT CHECK: Confirm model, working range, compatibility, consumables and required configuration before quotation.
DOCUMENTATION REVIEW: Product specifications and configuration details are reviewed against laboratory use requirements.
ACCESSORY MATCHING: Compatible accessories, replacement parts and consumables can be matched according to the selected configuration.
INQUIRY NOTE: Include the required model, configuration and quantity when requesting quotation support.
LABORATORY PROCUREMENT SUPPORT
For model selection, accessory matching, platform compatibility or configuration confirmation, contact our technical sales team.
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

Silicon sputtering targets require verification of surface condition, dimensional tolerance, bonding configuration, and storage atmosphere before installation. Uncontrolled handling or incompatible mounting can lead to contamination, mechanical mismatch, or deposition process failure.

  • Surface condition verification: Confirm the turned or ground target surface maintains a typical Ra of no more than 1.6 µm before installation.
  • Dimensional tolerance check: Verify the target diameter and thickness remain within the stated ±0.10 mm tolerance against the sputter tool's holder specifications.
  • Bonding configuration selection: Choose unbonded, copper backing plate bonded, or magnetic shim mounting only after confirming compatibility with the deposition system's clamping and cooling design.
  • Storage and packaging retention: Keep the target in its vacuum packaging until mounting to limit surface contamination and oxidation.
  • Resistivity grade compatibility: Confirm the doping and resistivity grade, whether intrinsic, n-type, or p-type, matches the intended sputtering process requirements.

How does the electrical resistivity of the 99.999% silicon sputtering target change with doping, and what resistivity values are specified?

Electrical resistivity varies with doping/resistivity grade; intrinsic Si is approximately 2.3×10^5 ohm cm. The target is offered as Si 4N5 intrinsic, n-type, or p-type, so the resistivity grade must be selected to match the intended sputtering process. Purity is 99.999% with typical total critical impurities <=10 ppm.

What dimensional tolerances, bonding options, and diameters are available for integrating this silicon target into a magnetron sputtering system?

This round planar target is available in diameters of 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80.0 mm, 101.6 mm, and 100 mm, with typical diameter tolerance +/-0.10 mm and thickness tolerance +/-0.10 mm. Thickness options are 3 mm, 4 mm, 5 mm, 6 mm, and 6.35 mm. Standard delivery is unbonded, with optional Cu backing plate bonding or magnetic shim available as a configured option.

How is the silicon target surface finished, packaged, and documented for laboratory use?

The surface state is turned/ground with Ra <=1.6 um typical. The target is vacuum packed with a certificate of analysis, and final parameters are confirmed by batch inspection and the agreed configuration. This packaging is intended to protect the research-grade surface during storage and handling.

This 99.999% round planar silicon sputtering target provides low typical total critical impurities (≤10 ppm), a turned/ground surface (Ra≤1.6 µm), and a broad diameter/thickness matrix for magnetron sputtering of semiconductor films. Resistivity varies with doping/resistivity grade, and the target ships unbonded unless an optional Cu backing plate or magnetic shim is configured, so process and mounting requirements must be confirmed before ordering.

Positive

  • 99.999% purity, ≤10 ppm critical impurities: The 99.999% silicon grade with typical total critical impurities ≤10 ppm supports controlled sputtering workflows for semiconductor film and silicon-based device deposition.
  • Broad round planar size matrix: Round planar geometry is available in diameters from 25.4 mm to 101.6 mm and thicknesses from 3 mm to 6.35 mm, accommodating different magnetron sputtering cathode dimensions and target lifetimes.

Trade-offs

  • Resistivity varies with doping grade: Electrical resistivity is not fixed; it changes with doping/resistivity grade, with intrinsic Si at approximately 2.3×10^5 ohm cm. The correct grade must be selected to match the sputtering power source and deposition process.
  • Unbonded by default; mounting must be confirmed: Targets are supplied unbonded unless optional Cu backing plate bonding or a magnetic shim is specified, so the sputter gun's mechanical and thermal interface requirements must be confirmed before ordering.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Thickness

3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm

Diameter

25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80.0 mm, 101.6 mm, 100 mm, 80 mm