Cerium-Magnesium-Nickel Sputtering Target 99.95% ATOMFAIR®

$480.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade CeMgNi sputtering target, 99.95% purity, 2 in diameter x 0.25 in, for DC/RF magnetron deposition and vacuum coating. Order now.

Cerium-Magnesium-Nickel Alloy Sputtering Target (CeMgNi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Cerium-Magnesium-Nickel Alloy Sputtering Target (CeMgNi) combines the CeMgNi alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.25 inand other sizes.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • CeMgNi alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for magnetic, magneto-optical and hydrogen-storage thin films, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-CEMS
Material / Formula CeMgNi
Purity 99.95%
Target Size 2 indiameter x 0.25 inand other sizes
Relative Density ≥93% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum arc melting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

Store the target in a dry, inert atmosphere to prevent surface oxidation and moisture adsorption. Avoid mechanical shock or abrasion to maintain surface finish below Ra 0.8 µm and prevent particle contamination.

  • Environmental Sensitivity: Exposure to ambient humidity or oxygen can degrade the reactive CeMgNi surface, requiring storage under argon or vacuum until installation.
  • Bonding Integrity: Indium or elastomer bonding layers may delaminate if the target is subjected to thermal cycling beyond the specified operating range during sputtering.
  • Contamination Risk: Total metallic impurities below 500 ppm and O+N below 100 ppm require clean handling with powder-free gloves and dedicated tools to avoid introducing foreign particles.

This procedure covers mounting, bonding verification, and pre-sputter conditioning of the CeMgNi alloy target for DC/RF magnetron sputtering. Proper installation ensures adhesion strength above 15 MPa and uniform deposition rates of 10–80 nm/min.

Required Equipment: Argon gas supply (99.999% purity), DC/RF magnetron sputtering system, Powder-free cleanroom gloves

  1. Inspect target surface and bonding
    Inspect the target surface for scratches, pits, or delamination at the bonding interface before mounting.
  2. Mount target onto backing plate
    Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified indium or elastomer bonding method.
  3. Evacuate chamber and introduce argon
    Evacuate the sputtering chamber to base pressure below 1×10⁻⁴ Pa, then backfill with argon to 0.5–2.0 Pa working pressure.
  4. Pre-sputter to remove surface oxide
    Pre-sputter the target for 5–10 minutes at 3 W/cm² (DC) or 1 W/cm² (RF) with shutter closed to remove any native oxide layer.
  5. Set deposition parameters for film growth
    Set DC power density to 3–15 W/cm² or RF power density to 1–5 W/cm², then open the shutter to begin film deposition on the substrate.

What are the achievable deposition rates and thickness uniformity for CeMgNi sputter-deposited films under DC magnetron sputtering?

Under DC magnetron sputtering at 3–15 W/cm² in 0.5–2.0 Pa Ar, deposition rates of 10–80 nm/min are achievable with ±5% thickness uniformity across a 100 mm substrate, as specified for the 99.95% pure CeMgNi target.

What sputtering pressure and power density ranges are recommended to maintain stoichiometric transfer for the CeMgNi alloy target?

For stoichiometric transfer within ±2 at%, operate at 0.5–2.0 Pa Ar with DC 3–15 W/cm² or RF 1–5 W/cm². The nominal CeMgNi composition enables close stoichiometric retention under these optimized conditions.

What bonding and backing plate options does the CeMgNi sputtering target offer, and how do they affect thermal management during deposition?

The target can be supplied with indium bonding or elastomer bonding, and backing plates of oxygen-free copper or CuCrZr. These options enhance heat dissipation during high-power sputtering, preventing target cracking and ensuring stable deposition rates.

The CeMgNi alloy sputtering target (99.95% purity, 2" diameter x 0.25" thickness) is optimized for DC/RF magnetron sputtering of magnetic, magneto-optical, and hydrogen-storage thin films, delivering deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates under controlled Ar atmosphere and power density ranges.

Positive

  • High purity with low impurity limits: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination in deposited films and improving resistivity and adhesion.
  • Optimized sputtering performance: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar yields deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.

Trade-offs

  • Specification matching required: The target requires careful verification of purity, dimensions, composition ratio, and bonding type against the deposition system before ordering, as mismatches can affect performance and compatibility.
  • Narrow operating parameter window: Optimal deposition occurs only within specific power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa) ranges, limiting flexibility for non-standard sputtering conditions.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).