Silicon Wafers & Substrates
Showing 1–16 of 70 results
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Atomfair 2″ N-type As-doped Ge Single Crystal Wafer As N-type 50.8±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 2″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 50.8±0.3mm (100)±0.5°or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 3″ N-type As-doped Ge Single Crystal Wafer As N-type 76.2±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 3″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 76.2±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 4-Inch N-Type Low Resistivity Monocrystalline Silicon Wafer, 500μm Thickness
$69.95 -
Atomfair 4″ N-type As-doped Ge Single Crystal Wafer As N-type 100±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 4″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 100±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 12″ 775um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 3″ 380um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 3″ 380um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 4″ 525um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 4″ 525um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP