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Aluminum-Magnesium-Silicon Alloy Sputtering Target (AlMgSi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target is designed for controlled sputtering under strict vacuum and inert atmosphere conditions. Adherence to specified power density and pressure ranges is critical to maintain film uniformity and avoid target damage.
- Processing Constraints: Operate DC magnetron sputtering at 3-15 W/cm² or RF at 1-5 W/cm² under 0.5-2.0 Pa argon to achieve deposition rates of 10-80 nm/min with ±5% thickness uniformity on 100 mm substrates.
- Compatibility Constraints: Select indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate to match the thermal and mechanical requirements of the deposition system.
- Failure Modes: Maintain <100 ppm total metallic and <20 ppm O+N impurities in the target to minimize film contamination and preserve adhesion strength >15 MPa per ASTM D4541.
- Environmental Sensitivity: Store and handle the target in a clean, dry environment to prevent oxidation or surface contamination that could degrade sputtering performance.
This procedure outlines the essential steps to install and sputter the AlMgSi alloy target under controlled vacuum conditions. Follow all steps in order to achieve consistent film quality and target longevity.
Required Equipment: Magnetron sputtering system (DC/RF power supply, vacuum chamber, argon supply)
- Verify Target Specifications
Confirm the target composition, dimensions, bonding type, and backing plate match the deposition system requirements before handling. - Mount Target in Sputtering Cathode
Secure the target onto the magnetron cathode, ensuring thermal contact and electrical continuity per the manufacturer's instructions. - Evacuate Chamber and Introduce Process Gas
Pump the chamber to base vacuum below 1×10⁻⁵ Pa, then backfill with argon to the operating pressure of 0.5-2.0 Pa. - Apply Sputtering Power and Monitor Deposition
Set the DC power density to 3-15 W/cm² (or RF 1-5 W/cm²) and initiate the plasma, then monitor deposition rate and film uniformity within the target's specified range.
What is the optimal power density range for DC/RF magnetron sputtering of the AlMgSi alloy target to achieve stoichiometric film transfer?
For the 99.99% AlMgSi target, DC magnetron sputtering at 3–15 W/cm² and RF magnetron sputtering at 1–5 W/cm² under 0.5–2.0 Pa Ar atmosphere enables stoichiometric transfer within ±2 at% of the nominal composition. Deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate are achievable within these power ranges.
What bonding and backing plate options are available for the 6-inch AlMgSi sputtering target and how do they affect thermal management?
The target is available with indium bonding or elastomer bonding as optional bonding types, and with oxygen-free copper or CuCrZr backing plates. Indium bonding offers higher thermal conductivity for efficient heat dissipation under high power, while elastomer bonding minimizes outgassing in UHV systems. The choice should be matched to the deposition system's cooling capacity and vacuum requirements.
What substrate preparation is required to achieve the specified adhesion strength of >15 MPa for AlMgSi sputtered films?
To achieve adhesion strength >15 MPa per ASTM D4541 pull-off testing, substrates must be properly prepared — typically via ultrasonic cleaning, plasma etching, or ion bombardment — to remove surface contaminants and promote chemical bonding. The target's 99.99% purity and O+N <20 ppm minimize interfacial contamination, but substrate preparation is critical for the stated adhesion performance.
The AlMgSi sputtering target offers 99.99% purity with controlled impurities and fine grain size (≤50 µm) for stoichiometric film deposition, requiring optimized DC/RF sputtering parameters and careful bonding selection to achieve consistent film quality and adhesion.
Positive
- High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
- Fine grain size and high density: Grain size ≤50 µm and relative density ≥95% of theoretical enable uniform sputtering and consistent film thickness uniformity across substrates.
Trade-offs
- Requires optimized deposition conditions: Optimal film stoichiometry and adhesion depend on precise DC/RF power density (3-15 W/cm² DC, 1-5 W/cm² RF), Ar pressure (0.5-2.0 Pa), and proper substrate preparation per ASTM D4541.
- Bonding and backing plate options: Indium or elastomer bonding and choice of oxygen-free copper or CuCrZr backing plate must be matched to the deposition system's thermal and compatibility requirements; optional configurations may affect lead time or system integration.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
