AlRe Aluminum Alloy Sputtering Target 99.9% 6 in ATOMFAIR®

$1,370.00

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Research-grade AlRe aluminum alloy sputtering target, 99.9% pure, 6 in x 0.125 in, for DC/RF magnetron sputtering and vacuum coating. Order now.

Aluminum Alloy Sputtering Target (AlRe)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Aluminum Alloy Sputtering Target (AlRe) combines the AlRe alloy composition with a source-listed purity of 99.9% and a target size of 6 indiameter x 0.125 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • AlRe alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for interconnect metallization, diffusion barrier layers and optical reflector coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-AL-ALRS
Material / Formula AlRe
Purity 99.9%
Target Size 6 indiameter x 0.125 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

Use this AlRe sputtering target only in DC or RF magnetron sputtering systems with matching bonding and backing plate configurations. Proper substrate cleaning and adherence to defined power density and argon pressure ranges are necessary to achieve the specified film adhesion and thickness uniformity.

  • Pre-order compatibility check: Verify that the target purity, dimensions, composition, and bonding requirements are compatible with the intended sputtering system before placing an order.
  • Power density limits: Apply DC power density between 3 and 15 W/cm² or RF power density between 1 and 5 W/cm² to avoid target overheating or mechanical failure.
  • Process gas pressure: Maintain argon pressure at 0.5 to 2.0 Pa to sustain stable plasma conditions during deposition.
  • Substrate preparation: Clean and prepare substrates according to established protocols to achieve a pull-off adhesion strength greater than 15 MPa per ASTM D4541.
  • Applicable deposition methods: Use this target exclusively in DC or RF magnetron sputtering systems and not in alternative deposition processes.

What are the key differences between DC and RF magnetron sputtering power ranges for the AlRe target, and how do they affect deposition rate?

For DC magnetron sputtering, the AlRe target operates optimally at 3–15 W/cm² with deposition rates up to 80 nm/min, while RF sputtering requires lower power density (1–5 W/cm²) and yields rates at the lower end (10–50 nm/min typical). The choice depends on your system's power supply and the need to avoid target cracking or excessive heating at higher DC power densities.

Which bonding type and backing plate material should I select for the AlRe sputtering target to ensure compatibility with my deposition system?

The AlRe target is available with indium bonding or elastomer bonding for the backing plate, which is offered in oxygen-free copper or CuCrZr. Indium bonding provides better thermal conductivity for high-power DC sputtering, while elastomer bonding may be preferred for low-temperature or non-contamination-sensitive applications. You must confirm the bonding type and backing plate material compatibility with your sputtering system's clamping mechanism and cooling configuration.

How do the grain size and purity specifications of the AlRe target impact film quality in interconnect or optical coating applications?

The AlRe target features a fine grain size (≤50 µm) and high relative density (≥95%), which promote uniform erosion and stable sputtering rates. The 99.9% purity with O+N <200 ppm minimizes film contamination, critical for applications like interconnect metallization where low resistivity and high adhesion (>15 MPa per ASTM D4541) are required.

The AlRe sputtering target (99.9% purity, 6 in. diameter x 0.125 in.) provides low-impurity, fine-grained material for DC/RF magnetron sputtering, delivering ±5% thickness uniformity across 100 mm substrates for interconnect and barrier layer deposition, but its narrow process window and optional bonding/backing plate configurations necessitate careful system integration.

Positive

  • High Purity and Low Impurity Levels: 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Excellent Thickness Uniformity: Deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under optimized DC/RF sputtering conditions, enabling consistent film properties.

Trade-offs

  • Narrow Sputtering Parameter Window: Optimal performance requires DC power density of 3-15 W/cm² or RF 1-5 W/cm² and Ar pressure of 0.5-2.0 Pa, demanding precise process control to achieve specified uniformity and stoichiometry.
  • Bonding and Backing Plate Selection Required: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional and not included by default, requiring additional procurement decisions and compatibility checks with existing deposition systems.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).