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Aluminum-Niobium Alloy Sputtering Target (AlNb)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires storage in a dry, inert atmosphere to prevent surface oxidation and moisture adsorption. Deposition must be performed under 0.5-2.0 Pa Ar atmosphere with power density limited to 3-15 W/cm² (DC) or 1-5 W/cm² (RF) to avoid target cracking or delamination.
- Power density constraint: Exceeding the maximum power density of 15 W/cm² (DC) or 5 W/cm² (RF) may cause thermal stress-induced cracking or bond failure.
- Atmosphere requirement: Sputtering must be conducted under a controlled argon atmosphere at 0.5-2.0 Pa to maintain stable plasma and prevent reactive contamination.
- Bonding integrity: Indium or elastomer bonding requires verification of thermal compatibility with the backing plate and deposition system to prevent debonding during operation.
- Substrate preparation: Deposited film adhesion strength exceeding 15 MPa (ASTM D4541) is contingent on properly cleaned and prepared substrate surfaces.
Mount the target onto a compatible backing plate using the specified bonding method and install into the magnetron sputtering system. Condition the target surface by pre-sputtering for 5-10 minutes at reduced power to remove any surface oxide layer before deposition.
Required Equipment: Magnetron sputtering system with DC or RF power supply, Argon gas supply with mass flow controller, Vacuum pump system capable of base pressure below 1×10⁻⁴ Pa
- Mount target
Mount the AlNb target onto the selected backing plate using indium or elastomer bonding, ensuring full thermal contact across the interface. - Install in chamber
Install the bonded target assembly into the magnetron sputtering cathode and secure all electrical and cooling connections. - Evacuate chamber
Evacuate the deposition chamber to a base pressure below 1×10⁻⁴ Pa to remove residual gases and moisture. - Introduce process gas
Introduce high-purity argon at a flow rate that achieves a working pressure of 0.5-2.0 Pa. - Pre-sputter target
Pre-sputter the target for 5-10 minutes at 50% of the intended deposition power to remove surface oxides and stabilize the plasma. - Set deposition parameters
Set the DC power density between 3-15 W/cm² or RF power density between 1-5 W/cm² to achieve a deposition rate of 10-80 nm/min. - Monitor film uniformity
Monitor film thickness uniformity across the substrate, targeting ±5% variation over a 100 mm diameter area.
What deposition rate and thickness uniformity can be expected from the AlNb sputtering target under DC magnetron sputtering?
Under DC magnetron sputtering at 3–15 W/cm² and 0.5–2.0 Pa Ar atmosphere, this AlNb target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate, as specified in the product documentation.
What are the recommended sputtering parameters and bonding options for this AlNb target?
The target is optimized for DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar atmosphere. Bonding options include indium bonding or elastomer bonding, with backing plate choices of oxygen-free copper or CuCrZr, as stated in the technical specifications.
What purity and microstructural specifications does the AlNb sputtering target meet?
The target is 99.9% (3N) pure with total metallic impurities <1000 ppm and O+N <200 ppm. It is manufactured via powder metallurgy or vacuum hot pressing to achieve ≥97% relative density and a fine grain size ≤50 µm, ensuring low contamination and consistent film properties.
The AlNb alloy sputtering target (99.9% purity, 6 in diameter, 0.125 in thickness) is designed for DC/RF magnetron sputtering with fine grain size (≤50 µm) and ≥97% relative density, enabling stoichiometric film transfer with controlled impurity levels and ±5% thickness uniformity across 100 mm substrates.
Positive
- High purity with low impurity levels: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering parameters: Specified DC (3–15 W/cm²) and RF (1–5 W/cm²) power density ranges under 0.5–2.0 Pa Ar atmosphere yield deposition rates of 10–80 nm/min with ±5% thickness uniformity, ensuring reproducible film growth.
Trade-offs
- Bonding and backing plate selection critical: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional; incorrect selection may affect thermal management and target lifetime in specific deposition systems.
- Pre-order specification verification required: Procurement check mandates confirmation of purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering to avoid compatibility issues.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
