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Zinc-Aluminum Alloy Sputtering Target (ZnAl (98:2 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This metal alloy sputtering target requires installation in a vacuum deposition system with a matching bonding and backing-plate configuration. Deposition must be performed within the specified DC/RF power and argon pressure envelope to preserve film stoichiometry and adhesion.
- Procurement and compatibility: Confirm target purity, dimensions, composition ratio, and bonding requirements against the deposition system before installation.
- Mounting and infrastructure: Mount the target using the specified bonding type and backing plate material in a vacuum chamber configured for magnetron sputtering.
- Sputtering operating envelope: Operate the target only under DC or RF magnetron sputtering within the rated power density and argon pressure range.
- Film quality and substrate preparation: Prepare substrates properly before deposition because film adhesion strength depends on substrate surface condition.
- Surface integrity: Inspect the machined sputtering surface to ensure the finish and thickness tolerance remain within specification.
This procedure covers the installation and initial operation of a ZnAl (98:2 wt%) sputtering target in a magnetron sputtering system. It assumes the target composition, size, purity, and bonding configuration have already been confirmed against the deposition equipment.
Required Equipment: Vacuum deposition chamber, DC/RF magnetron sputtering source, Backing plate with bonding interface, Argon gas supply
- Confirm specifications
Confirm the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before installation. - Inspect target
Inspect the sputtering surface for damage, contamination, or out-of-tolerance finish before mounting. - Mount target
Mount the target onto the specified backing plate using the selected indium or elastomer bonding method. - Install in chamber
Install the bonded target assembly into the vacuum chamber configured for magnetron sputtering. - Establish atmosphere
Evacuate the chamber and backfill with argon to the required operating pressure for sputtering. - Apply power
Apply DC or RF power within the rated density limits and stabilize the sputtering condition before deposition. - Begin deposition
Begin deposition onto properly prepared substrates once the target surface and plasma are stable.
What deposition rates and thickness uniformity can be achieved when sputtering the ZnAl (98:2 wt%) target under DC and RF conditions?
Under optimized DC magnetron sputtering at 3–15 W/cm² and 0.5–2.0 Pa Ar atmosphere, deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate are achievable. RF sputtering at 1–5 W/cm² yields a similar rate range. These parameters enable stoichiometric transfer of the 98:2 wt% composition to within ±2 at%.
What bonding and backing plate options are available for this ZnAl sputtering target, and how do they affect compatibility with different deposition systems?
The target is offered with indium bonding or elastomer bonding (optional) and a backing plate of oxygen-free copper or CuCrZr (optional). These choices impact thermal conductivity, mechanical clamping compatibility, and system-specific mounting requirements. Users must confirm bonding type and backing plate material against their sputtering system's target holder and cooling configuration before ordering.
What purity and impurity specifications does the ZnAl target meet, and why are they critical for thin-film electronic applications?
The target is rated at 99.99% (4N) purity with total metallic impurities below 100 ppm and oxygen plus nitrogen below 20 ppm. These tight impurity limits minimize contamination during sputtering, directly improving deposited film resistivity, adhesion strength (>15 MPa per ASTM D4541), and overall reliability for sacrificial protection and electronic thin-film layers.
The ZnAl (98:2 wt%) sputtering target offers 99.99% purity with controlled metallic and oxygen-nitrogen impurities, enabling low-contamination thin-film deposition via DC/RF magnetron sputtering at 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates.
Positive
- High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Supports DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Requires optimized process conditions: Stoichiometric transfer within ±2 at% and adhesion >15 MPa depend on maintaining specified power density, Ar pressure, and substrate preparation, demanding precise process control.
- Bonding and backing plate selection needed: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate must be chosen based on thermal management needs, affecting target lifetime and film uniformity.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
