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Yttrium-Iron Alloy Sputtering Target (YFe)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum deposition infrastructure and controlled atmosphere to prevent oxidation of the YFe alloy surface. Bonding type and backing plate material must be matched to the sputtering system's thermal and mechanical interface.
- Sputtering Atmosphere Constraint: Operate under 0.5-2.0 Pa Ar atmosphere to maintain stable plasma and stoichiometric film transfer.
- Power Density Limit: Do not exceed 15 W/cm² for DC or 5 W/cm² for RF sputtering to avoid target cracking or delamination.
- Bonding Compatibility: Select indium bonding for high thermal conductivity applications or elastomer bonding for systems requiring non-metallic interfaces.
- Substrate Preparation Requirement: Properly clean and prepare substrates to achieve deposited film adhesion strength exceeding 15 MPa per ASTM D4541.
Mount the YFe alloy target into a magnetron sputtering system with appropriate bonding and backing plate. Condition the target surface and optimize deposition parameters for stoichiometric film growth.
Required Equipment: DC/RF magnetron sputtering system, Argon gas supply, Vacuum chamber with base pressure <1e-5 Pa
- Mount target
Secure the YFe target onto the sputtering cathode using the selected bonding method and backing plate. - Evacuate chamber
Pump the deposition chamber to a base pressure below 1e-5 Pa to remove residual gases. - Introduce sputtering gas
Flow argon into the chamber to achieve a working pressure between 0.5 and 2.0 Pa. - Pre-sputter target
Pre-sputter the target for 5-10 minutes at low power to remove surface oxide and contaminants. - Set deposition parameters
Apply DC power density of 3-15 W/cm² or RF power density of 1-5 W/cm² to achieve a deposition rate of 10-80 nm/min. - Deposit film
Open the shutter and deposit the YFe film onto the substrate, monitoring thickness uniformity within ±5% across a 100 mm area. - Vent and retrieve sample
Vent the chamber to atmosphere and carefully remove the coated substrate for analysis.
What are the optimal DC and RF power density ranges for the YFe sputtering target, and how do they affect deposition rate and uniformity?
The YFe alloy target is optimized for DC magnetron sputtering at 3–15 W/cm² and RF sputtering at 1–5 W/cm² under 0.5–2.0 Pa Ar atmosphere. Within these ranges, deposition rates of 10–80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate, enabling predictable film growth and stoichiometric transfer within ±2 at%.
What bonding and backing plate options are available for the YFe target, and how do they affect compatibility with different sputtering systems?
The YFe target is available with indium bonding or optional elastomer bonding, and backing plate options of oxygen-free copper or CuCrZr. Indium bonding provides high thermal conductivity for high-power DC sputtering, while elastomer bonding is suitable for RF or lower-temperature processes. The backing plate material should be matched to your system's clamping and cooling requirements to ensure proper heat dissipation and target stability.
How do the grain size (≤50 µm) and relative density (≥95%) of the YFe target influence film quality and target performance?
A fine grain size (≤50 µm) promotes uniform sputter erosion and consistent film composition across the target life, while high relative density (≥95% of theoretical) minimizes porosity and particle generation during deposition. These specifications together reduce defect density in deposited films and improve adhesion strength, which is specified as >15 MPa (ASTM D4541) on properly prepared substrates.
This YFe alloy sputtering target offers 99.95% purity with low metallic and gaseous impurities, enabling stoichiometric film deposition under optimized DC/RF magnetron sputtering conditions. Its fine-grained structure (<50 µm) and >95% relative density support uniform film thickness across 100 mm substrates.
Positive
- High purity with low impurities: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Supports DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Bonding and backing plate not included: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional, requiring separate specification and confirmation of compatibility with the deposition system.
- Process parameter sensitivity: Optimal stoichiometric transfer and film uniformity depend on precise control of power density, Ar pressure, and substrate preparation; deviations may alter film properties.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
