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Tungsten-Titanium Alloy Sputtering Target (WTi(90:10wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum-based deposition under controlled argon atmosphere to prevent oxidation and contamination. Bonding type and backing plate material must be selected to match the deposition system's thermal and mechanical requirements.
- Deposition Atmosphere Constraint: Sputtering must be performed under 0.5-2.0 Pa argon atmosphere to maintain plasma stability and film stoichiometry.
- Power Density Limit: Apply DC power density between 3-15 W/cm² or RF power density between 1-5 W/cm² to avoid target cracking or delamination.
- Bonding and Backing Plate Compatibility: Select indium or elastomer bonding with oxygen-free copper or CuCrZr backing plate to ensure thermal dissipation and mechanical integrity during sputtering.
- Surface Finish Requirement: Maintain machined surface finish with Ra ≤ 0.8 µm to minimize arcing and particle generation during deposition.
Install the target into a compatible magnetron sputtering system with appropriate bonding and backing plate. Operate under DC or RF power within specified limits to achieve uniform film deposition.
Required Equipment: Magnetron sputtering system with DC/RF power supply, Argon gas supply with flow controller
- Inspect Target Surface
Inspect the target surface for visible defects or contamination before mounting. - Mount Target with Bonding
Mount the target onto the selected backing plate using the specified bonding method to ensure thermal contact. - Install Assembly into Chamber
Install the bonded target assembly into the sputtering chamber and secure all electrical connections. - Evacuate and Backfill with Argon
Evacuate the chamber to base pressure below 1×10⁻⁴ Pa, then backfill with argon to 0.5-2.0 Pa working pressure. - Set Power Density
Set the DC power density between 3-15 W/cm² or RF power density between 1-5 W/cm² according to the target size. - Pre-sputter to Clean Surface
Pre-sputter the target for 5-10 minutes with shutter closed to remove surface oxides and contaminants. - Deposit Film on Substrate
Open the shutter and deposit the film at the desired rate, monitoring thickness uniformity across the substrate.
How does the choice of DC versus RF sputtering and applied power density affect deposition rate and film stoichiometry for this WTi(90:10wt%) target?
The target supports both DC and RF magnetron sputtering. Under DC sputtering at 3-15 W/cm², deposition rates range from 10-80 nm/min; under RF at 1-5 W/cm², rates are lower but with improved control. Optimized conditions achieve stoichiometric transfer to within ±2 at% of the 90:10 wt% ratio, with a ±5% thickness uniformity across a 100 mm substrate.
What bonding and backing plate options are available for this WTi target and how do they impact thermal management and system compatibility?
The target offers indium bonding or elastomer bonding as optional bonding types, and the backing plate can be oxygen-free copper or CuCrZr alloy. Indium bonding provides high thermal conductivity for efficient heat dissipation during high-power DC sputtering, while elastomer bonding may be preferred in systems where indium contamination is a concern. Backing plate material choice similarly affects thermal transfer and must match the sputtering cathode design.
What are the trade-offs between indium bonding and elastomer bonding for this WTi target in terms of thermal management, outgassing, and reusability?
Indium bonding offers superior thermal conductivity critical for sustaining high DC power densities (up to 15 W/cm²) but may introduce contamination risks if the target is reprocessed. Elastomer bonding reduces outgassing and avoids indium-related impurities, making it suitable for ultra-clean RF sputtering, though it has lower thermal conductance. The intended deposition conditions and film purity requirements dictate the appropriate choice.
The Tungsten-Titanium Alloy Sputtering Target (WTi(90:10wt%)) with 99.95% purity and Delta200 size is engineered for DC/RF magnetron sputtering, offering controlled stoichiometry transfer and <500 ppm total metallic impurities to minimize film contamination. The target requires pre-order confirmation of dimensions, bonding, and backing plate specifications to ensure compatibility with the deposition system.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm reduces contamination risk, improving deposited film resistivity and adhesion strength.
- Optimized sputtering performance: Supports DC (3-15 W/cm²) and RF (1-5 W/cm²) magnetron sputtering under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rate with ±5% thickness uniformity on 100 mm substrates.
Trade-offs
- Requires specification confirmation: Procurement check advises confirming purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering to ensure fit.
- Optional bonding and backing plate: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are optional selections that must be specified, adding a configuration step for the buyer.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
