Tungsten Alloy Sputtering Target WRe 90/10 99.95% ATOMFAIR®

Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Avoid exposure to moisture and reactive gases, which can degrade film adhesion and purity.

• Environmental Sensitivity: The target must be stored under vacuum or in a sealed container with desiccant to minimize oxygen and moisture adsorption.
• Handling Precautions: Handle the target with clean, powder-free gloves to avoid introducing organic contaminants that can compromise sputtered film quality.
• Bonding Integrity: Indium or elastomer bonding requires careful thermal management during sputtering to prevent delamination at high power densities.
• Substrate Preparation: Achieving adhesion strength >15 MPa requires substrates to be ultrasonically cleaned and plasma-etched prior to deposition.

This procedure covers mounting, outgassing, and conditioning the target for DC/RF magnetron sputtering. Proper execution ensures stable deposition rates and film uniformity.

Required Equipment: Magnetron sputtering system with DC/RF power supply, Vacuum chamber with base pressure ≤ 5×10⁻⁴ Pa, Argon gas supply (99.999% purity)

1. Mount the target
   Secure the target onto the backing plate using the specified bonding method, ensuring full thermal contact and no voids.
2. Evacuate the chamber
   Pump the chamber to a base pressure below 5×10⁻⁴ Pa to remove residual water vapor and oxygen.
3. Introduce process gas
   Backfill with argon to a working pressure of 0.5–2.0 Pa, maintaining a stable flow rate.
4. Condition the target surface
   Pre-sputter the target for 10–15 minutes at low power (1–3 W/cm²) with the shutter closed to remove surface oxides.
5. Set deposition parameters
   Adjust power density to 3–15 W/cm² (DC) or 1–5 W/cm² (RF) and confirm a stable plasma without arcing.
6. Begin deposition
   Open the shutter and deposit the film at the target rate of 10–80 nm/min, monitoring thickness uniformity across the substrate.

The WRe (90/10 wt%) alloy sputtering target with 99.95% purity and ≤50 µm grain size is engineered for DC/RF magnetron sputtering, delivering deposition rates of 10-80 nm/min with ±5% thickness uniformity on 100 mm substrates, but requires optimized power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar atmosphere (0.5-2.0 Pa) to achieve stoichiometric transfer within ±2 at%.

Positive

• High purity with low metallic impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
• Fine-grained microstructure for uniform sputtering: Grain size ≤50 µm and relative density ≥95% of theoretical support consistent erosion and film uniformity during DC/RF magnetron sputtering.

Trade-offs

• Narrow operating power density window: Optimal sputtering requires DC power density of 3-15 W/cm² or RF of 1-5 W/cm²; deviations risk non-stoichiometric film transfer or target damage.
• Bonding and backing plate options require specification: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional; incorrect selection may cause thermal mismatch or poor heat dissipation in the deposition system.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).