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Tungsten-Nickel Alloy Sputtering Target (W/Ni (90:10))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This target requires vacuum-based deposition infrastructure and controlled atmosphere to prevent oxidation and contamination. The indium or elastomer bonding layer imposes thermal and mechanical limits during sputtering.
- Deposition Atmosphere Constraint: Operate only under 0.5-2.0 Pa Ar atmosphere to maintain plasma stability and film stoichiometry.
- Power Density Limit: Do not exceed 15 W/cm² for DC or 5 W/cm² for RF sputtering to avoid target cracking or delamination.
- Bonding Layer Sensitivity: Indium bonding degrades above 150°C; confirm cooling system capacity before extended high-power runs.
- Surface Contamination Risk: Store in a dry, inert environment to prevent surface oxidation that degrades film adhesion.
This procedure covers mounting, bonding verification, and pre-sputter conditioning for a W/Ni (90:10) target. Proper installation prevents arcing, delamination, and film contamination.
Required Equipment: DC/RF magnetron sputtering system with substrate holder, Argon gas supply with mass flow controller, Cooling water circulation system
- Inspect target surface and bonding
Inspect the target surface for scratches or debris and verify the indium or elastomer bond layer is intact without voids. - Mount target onto backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method and torque fasteners evenly. - Install assembly in sputtering chamber
Install the target assembly into the magnetron cathode and connect cooling water lines to maintain temperature below 150°C. - Evacuate chamber and introduce argon
Evacuate the chamber to base pressure below 1×10⁻⁴ Pa, then backfill with argon to 0.5-2.0 Pa working pressure. - Pre-sputter to remove surface oxide
Pre-sputter the target for 5-10 minutes at 3-5 W/cm² DC power with shutter closed to remove any native oxide layer. - Set deposition parameters and begin coating
Set the desired power density within 3-15 W/cm² DC or 1-5 W/cm² RF, open the shutter, and deposit film at 10-80 nm/min rate.
What deposition rate and thickness uniformity can be expected from the W/Ni (90:10) sputtering target under DC magnetron sputtering?
Under optimized conditions, the target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. This performance is specified for DC magnetron sputtering at 3–15 W/cm² in a 0.5–2.0 Pa Ar atmosphere.
Can this W/Ni (90:10) sputtering target be used with RF magnetron sputtering, and what are the power density limits?
Yes, the target is compatible with RF magnetron sputtering, with a recommended power density range of 1–5 W/cm². It is also designed for DC magnetron sputtering, giving flexibility for different deposition systems.
What bonding and backing plate options are available for the W/Ni (90:10) sputtering target to manage thermal load?
The target offers indium bonding or elastomer bonding as optional bonding types, with backing plate choices of oxygen-free copper or CuCrZr. These options allow optimization of thermal conductivity and mechanical stability for high-power sputtering applications.
The W/Ni (90:10) alloy sputtering target (99.95% purity, 8 in diameter x 0.25 in) is evaluated for DC/RF magnetron sputtering, offering stoichiometric transfer within ±2 at% and deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, constrained by a maximum power density of 3-15 W/cm² (DC) or 1-5 W/cm² (RF) and a required Ar atmosphere of 0.5-2.0 Pa.
Positive
- High purity and fine grain structure: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm, combined with a grain size ≤50 µm, minimizes film contamination and supports consistent resistivity and adhesion in deposited thin films.
- Controlled stoichiometric transfer: The W/Ni (90:10) alloy composition transfers to deposited films within ±2 at% under optimized sputtering conditions, enabling reproducible film chemistry for functional coatings.
Trade-offs
- Narrow sputtering parameter window: Optimal deposition requires strict adherence to DC power density of 3-15 W/cm² or RF of 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere; deviations may reduce film uniformity or stoichiometric accuracy.
- Bonding and backing plate dependencies: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates are optional but must be specified; incorrect selection may compromise thermal management and target integrity during high-power sputtering.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
