Tungsten-Lanthanum Alloy Sputtering Target 99.95% ATOMFAIR®

$710.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade W-La sputtering target, 99.95% purity, 3 in diameter x 0.125 in, for DC/RF magnetron sputtering and vacuum coating. In stock.

Tungsten-Lanthanum Alloy Sputtering Target (W-La)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Tungsten-Lanthanum Alloy Sputtering Target (W-La) combines the W-La alloy composition with a source-listed purity of 99.95% and a target size of 3 indiameter x 0.125 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • W-La alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for magnetic, magneto-optical and hydrogen-storage thin films, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-WLAS
Material / Formula W-La
Purity 99.95%
Target Size 3 indiameter x 0.125 in
Relative Density ≥93% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum arc melting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This target requires bonding to a backing plate via indium or elastomer bonding to ensure thermal and electrical conductivity during sputtering. The sputtering process must be operated within the specified power density and Ar pressure ranges to prevent target cracking and ensure film uniformity.

  • Bonding Type: The target must be bonded with either indium bonding or elastomer bonding to a compatible backing plate (oxygen-free copper or CuCrZr) for heat dissipation.
  • Power Density Limits: DC power density should not exceed 15 W/cm² and RF power density should not exceed 5 W/cm² to avoid thermal damage.
  • Process Atmosphere: Sputtering must be performed under Ar atmosphere at 0.5-2.0 Pa for stable plasma and deposition rate.
  • Substrate Preparation Requirement: Deposited films achieve >15 MPa adhesion only on properly prepared substrates; therefore, substrates must be cleaned and surface-treated before deposition.
  • Dimensional Compatibility: The target dimensions (3 in diameter x 0.125 in thickness) and bonding type must be verified against the sputtering system's target holder and cooling assembly.

What are the recommended sputtering power densities and achievable deposition rates for the 99.95% W-La alloy target?

For DC magnetron sputtering, the recommended power density range is 3-15 W/cm²; for RF sputtering, it is 1-5 W/cm². Under a 0.5-2.0 Pa Ar atmosphere, deposition rates of 10-80 nm/min are achievable, with ±5% thickness uniformity across a 100 mm substrate.

What bonding and backing plate configurations are available for the W-La sputtering target, and how do they affect thermal management?

The target offers optional indium bonding or elastomer bonding, both of which enhance thermal contact between the target and the backing plate. Available backing plate materials include oxygen-free copper and CuCrZr, which provide high thermal conductivity to dissipate heat during sputtering. These choices allow the user to match the assembly to the thermal and mechanical requirements of their deposition system.

What impurity limits are specified for the 99.95% W-La target, and why are they critical for thin film performance?

The 99.95% (3N5) purity grade specifies total metallic impurities below 500 ppm and oxygen + nitrogen combined below 100 ppm. These strict impurity limits minimize contamination in deposited films, thereby preserving resistivity, adhesion, and stoichiometric transfer. Adhesion strength of deposited films exceeds 15 MPa (ASTM D4541 pull-off) on properly prepared substrates, which relies on low impurity levels.

The W-La alloy sputtering target (99.95% purity, 3 in diameter x 0.125 in) is engineered for DC/RF magnetron sputtering of magnetic, magneto-optical, and hydrogen-storage thin films, with a fine-grained microstructure (≤50 µm) and ≥93% relative density to support stoichiometric transfer and adhesion >15 MPa.

Positive

  • High-purity alloy with low impurities: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes film contamination, improving resistivity and adhesion for sensitive thin-film applications.
  • Optimized sputtering performance window: Supports DC sputtering at 3-15 W/cm² and RF at 1-5 W/cm² under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.

Trade-offs

  • Bonding and backing plate options required: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates are optional, requiring specification at order to ensure thermal and mechanical compatibility with the deposition system.
  • Precise procurement verification needed: Purity, dimensions, composition ratio, and bonding requirements must be confirmed against the deposition system before ordering to avoid operational mismatch.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).