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Tungsten-Chromium Alloy Sputtering Target (WCr)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum deposition infrastructure and controlled atmosphere to prevent oxidation during handling. Bonding type and backing plate material must be confirmed against the deposition system to ensure thermal and mechanical compatibility.
- Power density limits: Apply DC power density between 3 and 15 W/cm² or RF power density between 1 and 5 W/cm² to avoid target cracking or delamination.
- Atmosphere requirement: Maintain argon working pressure between 0.5 and 2.0 Pa during sputtering to achieve stable plasma and stoichiometric film transfer.
- Substrate preparation: Prepare substrates to achieve adhesion strength greater than 15 MPa per ASTM D4541 pull-off test for deposited films.
- Bonding compatibility: Select indium or elastomer bonding based on target power load and system cooling capacity to prevent thermal failure.
Mount the target in a magnetron sputtering system with appropriate bonding and backing plate for thermal management. Condition the target surface and deposit under controlled argon atmosphere to achieve uniform film thickness.
Required Equipment: DC or RF magnetron sputtering system, Argon gas supply with pressure regulator, Substrate holder with rotation capability
- Confirm target specifications
Verify the target purity, dimensions, composition ratio, and bonding type match the deposition system requirements before installation. - Mount the target
Secure the bonded target onto the magnetron cathode using the appropriate backing plate and ensure thermal contact is adequate for the intended power density. - Evacuate the chamber
Pump the sputtering chamber to a base pressure below 1×10⁻⁴ Pa to minimize residual gas contamination. - Introduce process gas
Flow argon into the chamber to achieve a working pressure between 0.5 and 2.0 Pa for stable plasma ignition. - Condition the target surface
Pre-sputter the target for 5 to 10 minutes with shutters closed to remove surface oxides and stabilize the deposition rate. - Deposit the film
Open the shutter and apply DC power at 3 to 15 W/cm² or RF power at 1 to 5 W/cm² to achieve a deposition rate of 10 to 80 nm/min. - Verify film uniformity
Measure thickness across a 100 mm substrate to confirm uniformity within ±5% of the target value.
What are the optimal sputtering conditions for the WCr target to achieve high deposition rates while maintaining film stoichiometry within ±2 at%?
For DC magnetron sputtering, use a power density of 3–15 W/cm²; for RF sputtering, use 1–5 W/cm², both under an Ar atmosphere of 0.5–2.0 Pa. Within these ranges, deposition rates of 10–80 nm/min are achievable, and the deposited film stoichiometry is controlled within ±2 at% of the source composition under optimized conditions.
What bonding and backing plate options are available for the WCr sputtering target to ensure compatibility with different sputtering systems?
The WCr target can be supplied with indium bonding or elastomer bonding, and the backing plate is available in oxygen-free copper or CuCrZr as optional choices. The standard target size is 8 in diameter x 0.25 in, with other sizes available upon request, allowing adaptation to various system geometries.
How is the WCr sputtering target manufactured, and what effect does that have on its performance?
The WCr target is manufactured via powder metallurgy and vacuum hot pressing, achieving a relative density of ≥97% and a fine grain size of ≤50 µm. This process yields a dense, fine-grained microstructure that promotes uniform sputter erosion and consistent film properties across the target surface.
The Atomfair WCr sputtering target (AF-MT-WCRS) delivers 99.9% purity with metallic impurities <1000 ppm and O+N <200 ppm, combined with fine grain size ≤50 μm and ≥97% relative density, enabling deposition rates of 10–80 nm/min with ±5% thickness uniformity across 100 mm substrates and adhesion >15 MPa, but requires pre-order verification of specifications and optional selection of bonding and backing plate materials.
Positive
- High purity and low contamination: 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes film contamination, improving resistivity and adhesion for diffusion barrier and gate electrode applications.
- Optimized sputtering performance: DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar achieves 10–80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates and adhesion >15 MPa (ASTM D4541).
Trade-offs
- Mandatory pre-order verification: Buyer must confirm purity, dimensions, composition ratio, and bonding requirements against their deposition system before ordering, as explicitly stated in the procurement check.
- Optional bonding and backing plate: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional choices that require upfront specification to ensure compatibility with the sputtering system.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
