Titanium-Tantalum Alloy Sputtering Target 99.5% ATOMFAIR®

$510.00

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Research-grade TiTa alloy sputtering target, 99.5% purity, -325 mesh (34 μm APS), Ra ≤0.8 μm, ±0.1 mm tolerance for DC/RF deposition. Order now.

Titanium-Tantalum Alloy Sputtering Target (TiTa)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Titanium-Tantalum Alloy Sputtering Target (TiTa) combines the TiTa alloy composition with a source-listed purity of 99.5% and a target size of – 325mesh(34 um aps).

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • TiTa alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.5% (2N5) purity with total metallic impurities <5000 ppm and O+N <1000 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for diffusion barriers, gate electrodes and high-temperature protective coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-TITS
Material / Formula TiTa
Purity 99.5%
Target Size – 325mesh(34 um aps)
Relative Density ≥97% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Powder metallurgy / Vacuum hot pressing
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

The target must be stored in a dry, inert atmosphere to prevent surface oxidation and moisture adsorption. Deposition requires a vacuum environment with controlled Ar pressure and power density to avoid target cracking or delamination.

  • Environmental Sensitivity: Exposure to ambient humidity or oxygen can degrade the target surface, leading to arcing and film contamination during sputtering.
  • Power Density Limit: Exceeding the maximum power density of 15 W/cm² (DC) or 5 W/cm² (RF) may cause thermal stress, cracking, or indium bond failure.
  • Bonding Integrity: Indium or elastomer bonding must be compatible with the backing plate material and operating temperature to prevent debonding during deposition.
  • Substrate Preparation: Deposited film adhesion strength >15 MPa requires properly cleaned and prepared substrates free of organic residues and native oxides.

This procedure covers mounting, bonding verification, and pre-sputter conditioning of the TiTa alloy target. Proper installation minimizes particle generation and ensures stable deposition rates.

Required Equipment: Vacuum deposition system with DC/RF magnetron source, Argon gas supply (99.999% purity), Thermal interface material (indium or elastomer pad)

  1. Inspect target surface
    Inspect the target surface for visible scratches, contamination, or oxidation before mounting.
  2. Mount target onto backing plate
    Mount the target onto the backing plate using the specified bonding method, ensuring full thermal contact and no voids.
  3. Install assembly in vacuum chamber
    Install the bonded target assembly into the magnetron cathode and secure all fasteners to manufacturer torque specifications.
  4. Evacuate chamber to base pressure
    Evacuate the chamber to a base pressure below 5×10⁻⁴ Pa to remove residual gases and moisture.
  5. Introduce argon process gas
    Introduce argon process gas to achieve a working pressure of 0.5–2.0 Pa for stable plasma ignition.
  6. Pre-sputter target to remove surface layer
    Pre-sputter the target at low power (2–3 W/cm²) for 10–15 minutes to remove any oxidized surface layer.
  7. Ramp to deposition power
    Ramp the power gradually to the desired deposition setpoint within the rated power density range to avoid thermal shock.

What are the recommended DC and RF magnetron sputtering parameters for the TiTa alloy target?

The TiTa target supports DC sputtering at 3-15 W/cm² and RF sputtering at 1-5 W/cm² under 0.5-2.0 Pa argon atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity over 100 mm substrates.

What is the purity and impurity specification of Atomfair's TiTa sputtering target?

The target is 99.5% (2N5) pure with total metallic impurities <5000 ppm and O+N <1000 ppm, which minimizes contamination and supports improved film resistivity and adhesion.

Which bonding and backing plate configurations are available for this target to manage thermal loads?

Optional indium bonding or elastomer bonding and backing plates of oxygen-free copper or CuCrZr are available to manage thermal dissipation during sputtering.

The TiTa sputtering target offers 99.5% purity with controlled metallic and oxygen/nitrogen impurities, enabling stoichiometric transfer and improved film adhesion, but requires careful selection of bonding type and backing plate to match deposition system compatibility.

Positive

  • High purity with low impurities: 99.5% (2N5) purity with total metallic impurities <5000 ppm and O+N <1000 ppm minimizes contamination, improving deposited film resistivity and adhesion.
  • Controlled deposition uniformity: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under optimized DC/RF magnetron sputtering conditions.

Trade-offs

  • Bonding and backing plate selection required: Optional bonding types (indium or elastomer) and backing plate materials (oxygen-free copper or CuCrZr) must be specified and confirmed compatible with the deposition system before ordering.
  • Narrow operating parameter window: Optimal sputtering requires DC power density of 3-15 W/cm² or RF 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere, imposing infrastructure and process control constraints.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).