Titanium-Aluminum-Chromium Target AF-TI-TIAS ATOMFAIR®

$960.00

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Research-grade TiAlCr sputtering target, 99.95% purity, 4 mm diameter x 0.25 mm thick, ≥95% density and Ra ≤0.8 μm for DC/RF magnetron coating. Order now.

Titanium-Aluminum-Chromium Alloy Sputtering Target (TiAlCr)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Titanium-Aluminum-Chromium Alloy Sputtering Target (TiAlCr) combines the TiAlCr alloy composition with a source-listed purity of 99.95% and a target size of 4mmdiameter x 0.25mm.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • TiAlCr alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for biomedical implant coatings, diffusion barriers and decorative films, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-TI-TIAS
Material / Formula TiAlCr
Purity 99.95%
Target Size 4mmdiameter x 0.25mm
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This document records the processing and compatibility constraints stated for the TiAlCr sputtering target. These constraints apply before and during DC/RF magnetron sputtering deposition.

  • Deposition atmosphere constraint: Maintain an argon process pressure between 0.5 and 2.0 Pa during DC/RF magnetron sputtering.
  • Power density limit: Limit the applied power density to 3-15 W/cm² for DC and 1-5 W/cm² for RF operation to avoid exceeding the target's rated working range.
  • Substrate preparation prerequisite: Deposit only on properly prepared substrates to meet the stated adhesion strength greater than 15 MPa.
  • Bonding and backing plate compatibility: Select indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate as required by the deposition system.
  • Pre-order specification validation: Confirm the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering.

This procedure describes preparation and installation steps for the TiAlCr sputtering target before DC/RF magnetron sputtering. Execute these steps only after confirming the target specifications match the deposition system.

Required Equipment: DC/RF magnetron sputtering system, Argon gas supply, Oxygen-free copper or CuCrZr backing plate

  1. Confirm target specifications
    Confirm target purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering.
  2. Verify surface finish
    Confirm the machined surface finish has a roughness Ra no greater than 0.8 µm before installation.
  3. Apply bonding
    Install the target using indium or elastomer bonding on an oxygen-free copper or CuCrZr backing plate.
  4. Mount the target
    Mount the bonded target assembly in the DC/RF magnetron sputtering system.
  5. Set process atmosphere
    Evacuate the chamber and introduce argon to a process pressure between 0.5 and 2.0 Pa for deposition.
  6. Set power density
    Set the applied power density within 3-15 W/cm² for DC or 1-5 W/cm² for RF operation.
  7. Verify deposited film
    Verify the deposited film thickness uniformity and adhesion strength on prepared substrates after deposition.

What film composition tolerance is specified for the TiAlCr alloy sputtering target?

The TiAlCr target enables stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions, as stated in the product specifications.

What adhesion strength can be expected from films deposited using this TiAlCr target?

Deposited films exhibit adhesion strength >15 MPa when measured by ASTM D4541 pull-off on properly prepared substrates, as specified for this target.

What are the key impurity specifications for this 99.95% TiAlCr sputtering target?

This target has a purity of 99.95% (3N5) with total metallic impurities <500 ppm and combined oxygen and nitrogen <100 ppm, minimizing contamination during deposition.

This TiAlCr sputtering target offers 99.95% purity and fine-grained structure, optimized for small-scale DC/RF magnetron sputtering with controlled deposition rates and uniformity, but the 4 mm diameter restricts substrate size and requires careful bonding and backing plate selection.

Positive

  • High purity and low impurity levels: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
  • Optimized sputtering performance: Engineered for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.

Trade-offs

  • Small target size limits applications: The 4 mm diameter x 0.25 mm thickness restricts use to small-scale or research deposition systems; not suitable for large-area coatings without specialized fixturing.
  • Bonding and backing plate requirements: Indium or elastomer bonding and optional oxygen-free copper or CuCrZr backing plate add procurement complexity and must be specified to match the sputtering system's clamping and cooling design.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).