TiSi Alloy Sputtering Target 4in x 0.25in ATOMFAIR®

$920.00

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Research-grade TiSi alloy sputtering target, 99.9% purity, 4 in diameter x 0.25 in thick, ≥95% dense, for DC/RF magnetron coating. Order now.

Titanium-Silicon Alloy Sputtering Target (TiSi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Titanium-Silicon Alloy Sputtering Target (TiSi) combines the TiSi alloy composition with a source-listed purity of 99.9% and a target size of 4 indiameter x 0.25 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • TiSi alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for biomedical implant coatings, diffusion barriers and decorative films, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-TI-TISS
Material / Formula TiSi
Purity 99.9%
Target Size 4 indiameter x 0.25 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires operation within specified power density and pressure ranges to achieve stoichiometric film transfer. The target must be bonded to an appropriate backing plate and used with a compatible deposition system.

  • Power and Pressure Constraints: Operate DC sputtering at 3-15 W/cm² or RF sputtering at 1-5 W/cm² under an argon atmosphere of 0.5-2.0 Pa for optimal deposition rates and uniformity.
  • Bonding and Backing Plate Requirements: Select indium bonding or elastomer bonding with an oxygen-free copper or CuCrZr backing plate to ensure thermal and electrical contact.
  • Substrate Preparation for Adhesion: Prepare substrates properly to achieve deposited film adhesion strength exceeding 15 MPa as measured by ASTM D4541 pull-off testing.
  • Deposition Uniformity and Rate: Expect deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under optimized conditions.
  • System Compatibility Check: Confirm target dimensions, purity grade, and bonding type against the deposition system before ordering to ensure mechanical and process compatibility.

What is the achievable deposition rate and thickness uniformity for the TiSi alloy sputtering target under DC magnetron sputtering?

The TiSi target achieves deposition rates of 10–80 nm/min under DC magnetron sputtering at 3–15 W/cm² power density and 0.5–2.0 Pa Ar atmosphere, with ±5% thickness uniformity across a 100 mm substrate. These specifications enable stoichiometric transfer within ±2 at% under optimized conditions.

What bonding and backing plate options are available for this TiSi sputtering target and how do they affect system compatibility?

The target offers optional indium bonding or elastomer bonding, and backing plates of oxygen-free copper or CuCrZr. These options must be confirmed against the deposition system's clamping mechanism, thermal management, and sputter source design to ensure proper heat conduction and vacuum integrity.

What purity and impurity levels does the TiSi target specify and how do they impact film quality in sensitive applications?

Purity is 99.9% (3N) with total metallic impurities <1000 ppm and O+N <200 ppm. This minimizes contamination in deposited films, which is critical for achieving reliable resistivity, adhesion (>15 MPa per ASTM D4541), and performance in biomedical coatings and diffusion barriers.

The Atomfair TiSi alloy sputtering target (99.9% purity, 4" diameter x 0.25") provides controlled stoichiometric transfer within ±2 at% and deposition rates of 10–80 nm/min under optimized DC/RF magnetron sputtering, but requires precise parameter adherence and proper substrate preparation to achieve specified film uniformity (±5% over 100 mm) and adhesion (>15 MPa).

Positive

  • High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
  • Optimized sputtering performance: DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar yields deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate.

Trade-offs

  • Parameter-dependent performance: Achieving stated stoichiometric transfer (±2 at%) and deposition rates requires strict adherence to optimized power density and Ar pressure ranges; deviations may reduce film quality.
  • Substrate preparation critical: Adhesion strength >15 MPa (ASTM D4541) applies only to properly prepared substrates; surface contamination or inadequate cleaning will compromise adhesion.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).