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Titanium-Niobium Alloy Sputtering Target (TiNb)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This sputtering target requires installation in a vacuum deposition system with appropriate bonding and backing plate to ensure thermal and electrical contact. Deposition parameters must be maintained within specified power density and argon pressure ranges to achieve stoichiometric transfer and film uniformity.
- Compatibility Verification: Verify target composition, dimensions, and bonding type are compatible with the deposition system before installation.
- Backing Plate and Bonding Selection: Select appropriate backing plate material (oxygen-free copper or CuCrZr) and bonding method (indium or elastomer) to ensure thermal management.
- Sputtering Parameter Range: Operate sputtering within the recommended power density range of 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa argon atmosphere.
- Substrate Preparation Requirement: Prepare substrate surfaces to achieve adhesion strength exceeding 15 MPa as measured by ASTM D4541 pull-off test.
- Environmental Control: Maintain chamber vacuum and gas purity to prevent oxidation and contamination of the deposited film.
What power density range should be used for DC magnetron sputtering of a TiNb alloy target to achieve optimal deposition rates and film uniformity?
Use 3–15 W/cm² for DC sputtering under 0.5–2.0 Pa Ar atmosphere, yielding deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. For RF sputtering, use 1–5 W/cm² within the same pressure range.
What purity and impurity limits are specified for the TiNb sputtering target to minimize contamination in deposited films?
The target is 99.9% (3N) pure with total metallic impurities <1000 ppm and O+N <200 ppm, ensuring low contamination for diffusion barrier, gate electrode, and protective coating applications.
What adhesion strength can be achieved with TiNb films deposited from this target, and is substrate preparation required?
Deposited films exhibit adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates. The source specifies "properly prepared substrates" but does not detail the preparation method.
The TiNb alloy sputtering target (99.9% purity, 4 in diameter x 0.25 in) is engineered for DC/RF magnetron sputtering, offering stoichiometric film transfer within ±2 at% and deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, suitable for diffusion barriers and gate electrodes.
Positive
- High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Supports DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Requires bonding confirmation: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are optional and must be specified and confirmed against the deposition system before ordering.
- Composition tolerance constraints: Stoichiometric transfer to deposited films is within ±2 at% only under optimized sputtering conditions, requiring careful process control to maintain target film composition.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
