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Titanium-Aluminum-Silicon Alloy Sputtering Target (TiAlSi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The TiAlSi sputtering target requires bonding to a backing plate and operation under controlled vacuum and power conditions to prevent target degradation. Deposition parameters must be optimized to maintain stoichiometric transfer and film adhesion above 15 MPa.
- Bonding and Backing Plate: Indium or elastomer bonding to an oxygen-free copper or CuCrZr backing plate is required to ensure thermal management and mechanical stability during sputtering.
- Power Density Limits: DC power density must be maintained between 3-15 W/cm² and RF power density between 1-5 W/cm² to avoid target cracking or excessive heating.
- Contamination Control: Total metallic impurities below 1000 ppm and O+N below 200 ppm are critical to minimize film contamination and achieve resistivity targets.
- Substrate Preparation: Substrate surfaces must be properly prepared to achieve adhesion strength exceeding 15 MPa as per ASTM D4541 pull-off testing.
- Deposition Environment: Sputtering must be performed under 0.5-2.0 Pa Ar atmosphere with optimized gas purity to maintain deposited film uniformity within ±5% across a 100 mm substrate.
How does the grain size and purity of the TiAlSi sputtering target influence film adhesion and resistivity for biomedical implant coatings?
The 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, supporting deposited film resistivity consistency. The fine grain size ≤50 µm contributes to uniform sputter erosion and film adhesion strength >15 MPa (ASTM D4541) on properly prepared substrates, which is critical for biomedical implant coatings.
What bonding and backing plate options are available for the TiAlSi sputtering target and how do they affect thermal management under DC sputtering at 15 W/cm²?
Indium bonding and elastomer bonding are optional; oxygen-free copper or CuCrZr backing plates are available. These options directly influence thermal conductivity to the target holder. At the upper DC power density limit of 15 W/cm², effective heat dissipation is necessary to prevent target cracking or debonding, making the choice of high-conductivity backing plate critical for sustained operation.
What are the recommended sputtering conditions for achieving ±5% thickness uniformity across a 100 mm substrate with this TiAlSi target?
For DC magnetron sputtering, the recommended power density is 3-15 W/cm² under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min. Thickness uniformity of ±5% across a 100 mm substrate is specified under optimized conditions within these parameters. RF sputtering can also be used at 1-5 W/cm².
The TiAlSi alloy sputtering target (SKU AF-AL-S-TIAL-9999-G2CI) offers a 99.9% purity with controlled metallic and oxygen/nitrogen impurities, enabling stoichiometric film transfer within ±2 at% under optimized DC/RF magnetron sputtering conditions, but requires careful power density management and bonding selection to avoid thermal stress or contamination in high-vacuum deposition systems.
Positive
- High purity with low impurity levels: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion for sensitive applications like biomedical coatings and diffusion barriers.
- Fine-grained microstructure for uniformity: Grain size ≤50 µm and relative density ≥95% of theoretical support consistent sputtering behavior and ±5% thickness uniformity across 100 mm substrates, critical for reproducible thin-film properties.
Trade-offs
- Narrow power density operating window: DC sputtering limited to 3-15 W/cm² and RF to 1-5 W/cm²; exceeding these ranges risks target cracking or non-stoichiometric film composition, requiring precise power control and system calibration.
- Bonding and backing plate dependencies: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates are optional but must be matched to the deposition system's thermal and vacuum requirements; incorrect selection can lead to poor thermal contact or outgassing.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
