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Titanium-Aluminum Alloy Sputtering Target (TiAl(10:90 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Sputtering of this target must be performed in a vacuum coating system under controlled argon pressure and power density. Bonding type, backing plate, and substrate preparation must be confirmed before deposition to avoid mounting incompatibility and adhesion failure.
- Sputtering process limits: Maintain DC power density between 3 and 15 W/cm² or RF power density between 1 and 5 W/cm² under 0.5–2.0 Pa argon to preserve deposition rate and uniformity.
- Film uniformity: Achieve ±5% thickness uniformity across a 100 mm substrate only under optimized sputtering conditions within the specified power and pressure ranges.
- Adhesion requirement: Use properly prepared substrates to achieve deposited film adhesion strength above 15 MPa as measured by ASTM D4541 pull-off.
- Mounting compatibility: Match indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate to the deposition system's mounting and cooling configuration.
- Specification confirmation: Confirm purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering.
Install the TiAl(10:90 at%) target into a compatible magnetron sputtering system, confirm the bonding and backing plate, and deposit under controlled argon pressure and power density. Verify target specifications before mounting and use only the stated DC/RF power limits during operation.
Required Equipment: Magnetron sputtering system, Vacuum chamber, Argon gas supply
- Verify target specifications
Verify the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before mounting. - Mount target to backing plate
Mount the target onto the selected oxygen-free copper or CuCrZr backing plate using the specified indium or elastomer bonding. - Install target assembly
Install the bonded target assembly into the magnetron sputtering vacuum chamber. - Set chamber atmosphere
Evacuate the chamber and introduce argon to a working pressure between 0.5 and 2.0 Pa. - Apply sputtering power
Apply DC or RF power within the specified density range and set the deposition parameters to achieve 10–80 nm/min for the intended coating thickness.
What is the typical deposition rate and thickness uniformity achievable with the TiAl(10:90 at%) alloy sputtering target under DC magnetron sputtering?
Under DC magnetron sputtering at 3-15 W/cm² and 0.5-2.0 Pa Ar atmosphere, deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate are achievable. The TiAl(10:90 at%) composition transfers stoichiometrically within ±2 at% under optimized conditions.
What bonding and backing plate options are available for the TiAl sputtering target, and which are recommended for DC/RF magnetron sputtering systems?
The target is available with indium bonding or elastomer bonding (optional) and with an oxygen-free copper or CuCrZr backing plate (optional). These options allow integration with various sputtering system clamp designs and thermal management requirements. Confirm compatibility with your specific system before ordering.
What are the recommended handling and storage conditions to preserve the purity and surface quality of the TiAl(10:90 at%) sputtering target?
The target has a machined surface finish Ra ≤ 0.8 µm and 99.95% purity. Store in a dry, inert atmosphere to minimize oxidation and contamination. Handle with clean gloves to avoid surface contamination, and protect the target from physical damage to maintain its fine-grained structure (grain size ≤50 µm, relative density ≥95%).
The TiAl(10:90 at%) sputtering target (SKU AF-AL-S-TIAL-9995-LO47) is a 99.95% purity metal alloy target with fine grain size (≤50 µm) and ≥95% relative density, designed for DC/RF magnetron sputtering. Its stoichiometric transfer capability (±2 at%) and adhesion strength (>15 MPa) suit biomedical, diffusion barrier, and decorative coating applications, though the 4-inch diameter and indium/elastomer bonding options require system-specific compatibility checks.
Positive
- High purity and fine grain structure: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, combined with ≤50 µm grain size and ≥95% relative density, minimizes film contamination and supports consistent deposition uniformity.
- Controlled stoichiometric transfer: The TiAl(10:90 at%) composition enables stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions, critical for applications requiring precise alloy ratios such as diffusion barriers and biomedical coatings.
Trade-offs
- Bonding and backing plate dependencies: The target requires indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate, which must be specified at order and may not be compatible with all sputtering systems without adapter modifications.
- Size and power density constraints: The 4-inch diameter target is limited to specific chamber geometries, and the recommended power density range (3-15 W/cm² DC, 1-5 W/cm² RF) under 0.5-2.0 Pa Ar atmosphere requires precise process control to avoid target cracking or non-uniform erosion.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
