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Iron Alloy Sputtering Target (Tb0.3Dy0.7Fe1.9)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Avoid exposure to moisture and reactive gases, as the alloy surface may degrade under ambient conditions.
- Environmental Sensitivity: The target must be stored in a vacuum or inert gas environment to maintain surface integrity and prevent oxidation prior to deposition.
- Handling Precautions: Handle the target with clean, powder-free gloves to avoid transferring oils or particulates that could compromise film adhesion and purity.
- Bonding Compatibility: Indium or elastomer bonding options require confirmation of thermal and mechanical compatibility with the sputtering system's backing plate and cooling design.
Install the target into a DC or RF magnetron sputtering system under cleanroom conditions. Condition the target surface by pre-sputtering to remove any native oxide layer before depositing functional films.
Required Equipment: DC/RF magnetron sputtering system, Vacuum-compatible handling gloves, Argon gas supply (99.999% purity)
- Inspect the target
Inspect the target surface for visible damage, contamination, or oxidation before mounting. - Mount the target
Mount the target onto the sputtering cathode using the specified bonding method and backing plate, ensuring thermal contact is uniform. - Evacuate the chamber
Evacuate the deposition chamber to a base pressure below 1×10⁻⁴ Pa to remove residual gases. - Introduce argon gas
Introduce high-purity argon gas to achieve a working pressure between 0.5 and 2.0 Pa. - Pre-sputter the target
Pre-sputter the target for 5–10 minutes at a power density of 3–5 W/cm² (DC) or 1–2 W/cm² (RF) with the shutter closed to remove surface contaminants. - Set deposition parameters
Set the deposition power density within 3–15 W/cm² (DC) or 1–5 W/cm² (RF) to achieve the desired deposition rate of 10–80 nm/min. - Begin film deposition
Open the shutter and begin film deposition on the substrate, monitoring thickness uniformity across the substrate area.
What is the typical deposition rate and uniformity for the Tb0.3Dy0.7Fe1.9 sputtering target under DC magnetron sputtering conditions?
Under optimized DC magnetron sputtering at 3–15 W/cm² and 0.5–2.0 Pa Ar atmosphere, the Tb0.3Dy0.7Fe1.9 target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The target's fine grain size (≤50 µm) and ≥93% relative density contribute to consistent sputtering behavior.
What bonding and backing plate options are available for the Tb0.3Dy0.7Fe1.9 sputtering target, and how do they affect compatibility with different sputtering systems?
The target is offered with indium bonding or elastomer bonding, and backing plate options of oxygen-free copper or CuCrZr. Indium bonding is preferred for high thermal conductivity applications, while elastomer bonding may be used for lower-temperature processes. Confirm bonding type and backing plate material with your system's cooling and mounting requirements before ordering.
What critical specifications must be verified before procuring the Tb0.3Dy0.7Fe1.9 sputtering target to ensure compatibility with an existing deposition system?
Before ordering, confirm target dimensions (e.g., 50.8 mm diameter x 5.65 mm thickness or other sizes), purity (99.9%), composition ratio (Tb0.3Dy0.7Fe1.9), and bonding/backing plate options. The source indicates a machined surface finish (Ra ≤ 0.8 µm) and thickness tolerance ±0.1 mm. Provide these specifications along with model number AF-MT-TB0S when requesting a quotation.
The Tb0.3Dy0.7Fe1.9 iron alloy sputtering target (99.9% purity, 50.8 mm diameter x 5.65 mm thickness) is engineered for magnetron sputtering of magneto-optical and hydrogen-storage thin films, with a fine-grained microstructure (≤50 µm) and ≥93% relative density to support stoichiometric transfer and adhesion >15 MPa under optimized DC/RF conditions.
Positive
- High-purity alloy with controlled stoichiometry: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, enabling stoichiometric transfer within ±2 at% under optimized sputtering conditions for consistent film composition.
- Fine-grained microstructure for uniform deposition: Grain size ≤50 µm and relative density ≥93% of theoretical reduce nodule formation and arcing during sputtering, supporting ±5% thickness uniformity across a 100 mm substrate.
Trade-offs
- Bonding and backing plate must be specified: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional; the target cannot be used without confirming compatibility with the deposition system's cooling and mounting requirements.
- Narrow operating window for optimal performance: Optimal sputtering requires DC power density of 3-15 W/cm² or RF of 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere; deviations may reduce deposition rate (10-80 nm/min) or film adhesion below >15 MPa.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
