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Tantalum-Tungsten Alloy Sputtering Target (TaW(90:10 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Handle using clean, powder-free gloves to avoid introducing organic residues that degrade film adhesion.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can form surface oxides that reduce sputtering yield and film purity.
- Contamination Risk: Fingerprints or airborne particulates on the target surface cause arcing during sputtering and non-uniform film deposition.
- Bonding Integrity: Indium or elastomer bonding layers may degrade if the target is stored above 40°C or subjected to rapid thermal cycling.
- Mechanical Damage: The fine-grained microstructure is susceptible to edge chipping if dropped or struck against hard surfaces.
Mount the target onto a compatible backing plate and bond assembly before loading into the sputtering chamber. Condition the target surface by pre-sputtering to remove any native oxide layer prior to deposition.
Required Equipment: Powder-free nitrile gloves, Isopropanol and lint-free wipes, Torque wrench for backing plate screws, Vacuum-compatible handling fixture
- Inspect the target surface
Inspect the target surface for visible scratches, chips, or discoloration under bright illumination before handling. - Clean the target surface
Wipe the target surface gently with isopropanol and a lint-free wipe to remove any particulate or organic residue. - Mount the target onto the backing plate
Mount the target onto the cleaned backing plate using the specified bonding method, ensuring full contact without trapped air pockets. - Secure the assembly in the sputtering chamber
Secure the bonded assembly into the sputtering cathode using a torque wrench to achieve uniform clamping pressure. - Evacuate the chamber to base pressure
Evacuate the chamber to a base pressure below 5×10⁻⁴ Pa to minimize residual gas contamination during sputtering. - Pre-sputter the target to remove surface oxide
Pre-sputter the target for 10–15 minutes at low power (1–2 W/cm²) under argon flow to remove the native oxide layer. - Verify deposition rate and uniformity
Verify the deposition rate and thickness uniformity using a quartz crystal monitor before beginning the production run.
How does the 90:10 wt% TaW composition ratio influence the stoichiometric transfer and film properties in sputtered coatings?
The TaW(90:10 wt%) alloy enables stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions. The 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, which improves deposited film resistivity and adhesion strength >15 MPa on properly prepared substrates.
What bonding and backing plate configurations are available for the TaW sputtering target to ensure thermal management in high-power deposition?
The target offers indium bonding or elastomer bonding as optional bonding types, with backing plate options of oxygen-free copper or CuCrZr. These configurations must be confirmed against the deposition system to manage heat dissipation during DC/RF sputtering at power densities up to 15 W/cm².
What sputtering gas pressure and power density range is required to achieve optimal deposition uniformity with the TaW alloy target?
For DC magnetron sputtering, the optimal power density range is 3-15 W/cm²; for RF, 1-5 W/cm², both under an Ar atmosphere of 0.5-2.0 Pa. Under these conditions, deposition rates of 10-80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate.
This TaW(90:10 wt%) sputtering target provides 99.95% purity with fine-grained microstructure (≤50 µm), enabling stoichiometric film transfer within ±2 at% under optimized DC/RF magnetron sputtering conditions at 0.5–2.0 Pa Ar, suitable for diffusion barriers and high-temperature protective coatings.
Positive
- High purity with low contaminants: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Fine-grained microstructure for uniformity: Grain size ≤50 µm and relative density ≥97% support consistent sputtering behavior and ±5% thickness uniformity across a 100 mm substrate.
Trade-offs
- Requires optimized sputtering conditions: Stoichiometric transfer within ±2 at% is achieved only under optimized DC/RF sputtering parameters (3–15 W/cm² DC, 1–5 W/cm² RF, 0.5–2.0 Pa Ar), limiting operational flexibility.
- Adhesion depends on substrate preparation: Deposited films exhibit adhesion strength >15 MPa (ASTM D4541) only on properly prepared substrates, requiring careful surface conditioning before coating.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
