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Aluminum Alloy Sputtering Target (SmAl2)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target must be stored in a dry, inert atmosphere to prevent surface oxidation and contamination. Bonding integrity degrades above 150°C for indium-bonded targets, requiring controlled cooling during high-power sputtering.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can form a native oxide layer on the target surface, reducing film adhesion and deposition rate.
- Thermal Management: Indium-bonded targets require a water-cooled backing plate to maintain the bond temperature below 150°C during sputtering.
- Contamination Risk: Total metallic impurities below 100 ppm and O+N below 20 ppm are specified, requiring clean handling with powder-free gloves and avoidance of abrasive contact.
This procedure covers mounting the SmAl2 target into a DC/RF magnetron sputtering system and initiating deposition. Proper bonding verification and pre-sputter cleaning are required to achieve stoichiometric film transfer.
Required Equipment: DC/RF magnetron sputtering system with water-cooled cathode, Argon gas supply (99.999% purity), Substrate holder with rotation capability
- Inspect target and bonding
Inspect the target surface for cracks, delamination, or discoloration and confirm the indium or elastomer bond is intact before mounting. - Mount target on backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method, ensuring full thermal contact. - Install in sputtering chamber
Install the assembled target into the magnetron cathode and secure the water-cooling lines to the backing plate. - Evacuate chamber and introduce argon
Evacuate the chamber to a base pressure below 5×10⁻⁴ Pa, then backfill with argon to a working pressure of 0.5–2.0 Pa. - Pre-sputter clean the target
Pre-sputter the target for 5–10 minutes at 50% of the intended power density with the shutter closed to remove surface contaminants. - Set deposition parameters
Set DC power density to 3–15 W/cm² or RF power density to 1–5 W/cm² and adjust the substrate-to-target distance for a deposition rate of 10–80 nm/min. - Begin deposition and monitor uniformity
Open the shutter and begin deposition, rotating the substrate at 10–20 rpm to achieve ±5% thickness uniformity across a 100 mm substrate.
What are the maximum power density limits for DC and RF magnetron sputtering of the SmAl2 sputtering target?
The SmAl2 target can be sputtered at maximum power densities of 3–15 W/cm² for DC and 1–5 W/cm² for RF. Exceeding these limits risks target cracking or delamination, especially if the bonding type and backing plate are not matched to the thermal load.
What deposition rates and thickness uniformity can be expected from this 2-inch SmAl2 target under typical magnetron sputtering conditions?
Under an Ar atmosphere of 0.5–2.0 Pa and with DC or RF power densities within the rated ranges, deposition rates of 10–80 nm/min and a thickness uniformity of ±5% across a 100 mm substrate are achievable. Actual rates depend on the specific power density and target-to-substrate distance.
What is the purity level and impurity specification of the SmAl2 sputtering target?
The target is 99.99% (4N) pure with total metallic impurities below 100 ppm and combined oxygen and nitrogen below 20 ppm. These low impurity levels minimize film contamination and are critical for maintaining the magnetic, magneto-optical, or hydrogen-storage properties of deposited SmAl2 films.
The SmAl2 sputtering target (99.99% purity, ≥93% density, ≤50 µm grain size) is engineered for DC/RF magnetron deposition, delivering stoichiometric transfer within ±2 at% for magnetic, magneto-optical, and hydrogen-storage thin films. Its low impurity profile (<100 ppm metallic, <20 ppm O+N) and adhesion strength >15 MPa support reliable film quality under controlled sputtering parameters.
Positive
- High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
- Optimized sputtering performance: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar yields deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates, suitable for magnetic and hydrogen-storage thin films.
Trade-offs
- Stoichiometric sensitivity: Maintaining film composition within ±2 at% of the nominal SmAl2 ratio requires careful optimization of sputtering power, pressure, and substrate temperature; deviations may alter film properties.
- Infrastructure and compatibility constraints: Use requires a vacuum deposition system capable of DC/RF magnetron sputtering with Ar atmosphere control. Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) must be selected to match the system's cooling and mounting requirements.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
