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Cobalt Alloy Sputtering Target (Sm1Co5)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Avoid exposure to moisture and reactive gases, which can degrade the sputtering surface and compromise film purity.
- Environmental Sensitivity: The target must be stored in a vacuum or argon-filled desiccator to minimize oxidation and adsorption of atmospheric contaminants.
- Handling Precautions: Handle the target using clean, powder-free gloves to avoid transferring oils or particulates that could cause arcing or film defects during sputtering.
- Bonding Integrity: Indium or elastomer bonding requires careful thermal management during sputtering to prevent debonding from the backing plate under high power densities.
This procedure covers the safe installation and pre-sputter conditioning of a Sm1Co5 target for DC/RF magnetron sputtering. Proper conditioning ensures stoichiometric transfer and minimizes particulate contamination.
Required Equipment: Vacuum-compatible sputtering system with DC/RF power supply, Argon gas supply (99.999% purity), Cleanroom-grade wipes and isopropanol
- Inspect the target surface
Inspect the target surface for visible scratches, discoloration, or debris before mounting. - Clean the target surface
Wipe the target surface gently with a lint-free cloth moistened with isopropanol to remove any residual particulates. - Mount the target onto the backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method, ensuring full thermal contact. - Evacuate the chamber to base pressure
Evacuate the sputtering chamber to a base pressure below 5×10⁻⁴ Pa to remove residual moisture and oxygen. - Introduce argon to the working pressure
Introduce high-purity argon to achieve a working pressure of 0.5–2.0 Pa for stable plasma ignition. - Pre-sputter the target to remove surface contamination
Pre-sputter the target for 5–10 minutes at low power (1–3 W/cm²) with the shutter closed to remove any oxidized surface layer. - Ramp power to the desired deposition condition
Ramp the power density gradually to the target deposition condition (3–15 W/cm² DC or 1–5 W/cm² RF) while monitoring plasma stability.
What are the optimal sputtering conditions for the Sm1Co5 alloy sputtering target to achieve stoichiometric film transfer?
For the Atomfair Sm1Co5 target, use DC magnetron sputtering at 3–15 W/cm² or RF at 1–5 W/cm² under an Ar atmosphere of 0.5–2.0 Pa. This yields deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate and stoichiometric transfer within ±2 at% of the Sm1Co5 composition when optimized.
What bonding and backing plate options are available for the Atomfair Sm1Co5 sputtering target, and how do they affect integration with deposition systems?
The target supports indium bonding or elastomer bonding as optional bonding types, with backing plates in oxygen-free copper or CuCrZr. Selecting the correct combination is critical for thermal management and mounting compatibility with your magnetron sputtering system, as improper bonding can cause delamination or poor heat dissipation during deposition.
What key specifications must be verified before ordering an Sm1Co5 sputtering target to ensure compatibility with existing deposition equipment?
Before ordering, confirm the target purity (99.99%, 4N), dimensions (e.g., 2" diameter x 0.25" thickness), composition ratio (Sm1Co5), and bonding type against your deposition system's requirements. The source explicitly advises verifying these parameters to prevent mismatches in mounting, cooling, or film stoichiometry.
Atomfair Sm1Co5 sputtering target offers 99.99% purity with low metallic and gas impurities, fine grain size, and optimized sputtering parameters for uniform thin film deposition. Requires careful selection of bonding and backing plate options and verification of compatibility with the deposition system.
Positive
- High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering uniformity: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under specified DC/RF conditions, enabling consistent film properties.
Trade-offs
- System compatibility verification required: Procurement note confirms that target specifications including purity, dimensions, composition ratio, and bonding requirements must be matched against the deposition system before ordering to avoid operational issues.
- Bonding and backing plate selection critical: Optional indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate require careful selection based on thermal and mechanical compatibility with the sputtering system.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
