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Silver-Indium Alloy Sputtering Target (AgInTe2)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and contamination. Handle with clean, powder-free gloves to avoid introducing organic residues that degrade film adhesion.
- Environmental Sensitivity: Exposure to ambient humidity above 30% RH may promote surface tarnishing, requiring pre-sputter cleaning to restore stoichiometric transfer.
- Bonding Integrity: Indium bonding requires a maximum substrate temperature of 150°C during sputtering to prevent bond-line failure and target delamination.
- Power Density Limit: Exceeding 15 W/cm² DC or 5 W/cm² RF risks thermal cracking of the target due to localized overheating in the fine-grained microstructure.
Mount the target onto a compatible backing plate using the specified bonding method to ensure thermal and electrical contact. Condition the target surface by pre-sputtering to remove any oxide layer before deposition.
Required Equipment: Oxygen-free copper or CuCrZr backing plate, Indium foil or elastomer bonding layer, DC/RF magnetron sputtering system with Ar gas supply
- Inspect target surface
Inspect the target surface for visible oxidation, scratches, or contamination before mounting. - Mount target on backing plate
Mount the target onto the backing plate using indium bonding or elastomer bonding, ensuring full contact across the interface. - Install assembly in sputtering chamber
Install the bonded assembly into the sputtering chamber and verify electrical continuity between the target and cathode. - Evacuate chamber and introduce argon
Evacuate the chamber to base pressure below 5×10⁻⁴ Pa, then backfill with 0.5-2.0 Pa Ar atmosphere. - Pre-sputter to clean surface
Pre-sputter the target for 5-10 minutes at 50% of operating power to remove surface contaminants and stabilize the plasma. - Set deposition parameters
Set DC power density to 3-15 W/cm² or RF power density to 1-5 W/cm², and adjust substrate distance to achieve desired deposition rate. - Begin deposition cycle
Begin the deposition cycle and monitor film thickness uniformity across the substrate using in-situ quartz crystal monitoring.
What are the recommended power density ranges for DC and RF magnetron sputtering of the AgInTe2 alloy target to achieve optimal deposition rates and film uniformity?
For DC sputtering, the recommended power density range is 3–15 W/cm²; for RF sputtering, 1–5 W/cm². Under a 0.5–2.0 Pa Ar atmosphere, these ranges yield deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
What bonding and backing plate configurations are available for the AgInTe2 sputtering target and how do they affect thermal management and system integration?
The target is available with indium bonding or elastomer bonding, and backing plate options include oxygen-free copper or CuCrZr. These choices allow users to tailor thermal conductivity and mounting compatibility with their specific sputtering system's cooling and mechanical requirements.
What are the dimensional tolerances and surface finish specifications for the AgInTe2 target, and why are they important for sputtering performance?
The target has a thickness tolerance of ±0.1 mm and a machined surface finish with Ra ≤ 0.8 µm. These specifications ensure consistent plasma behavior, uniform film deposition, and reliable thermal contact with the backing plate during sputtering.
The AgInTe2 sputtering target offers 99.99% purity with low impurity levels and optimized sputtering parameters for uniform film deposition, but requires careful selection of bonding and backing plate options and adherence to specified operating conditions to achieve the stated performance.
Positive
- High purity with low impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination and improves deposited film resistivity and adhesion.
- Optimized sputtering performance: DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar yields 10–80 nm/min deposition rates with ±5% thickness uniformity over 100 mm substrates and adhesion >15 MPa.
Trade-offs
- Requires configuration selection: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) must be specified and confirmed against the deposition system before ordering.
- Operating condition sensitivity: Achieving stated deposition rates, uniformity, and adhesion requires strict adherence to the specified power density range, Ar pressure, and substrate preparation protocols.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
