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Silicon-Chromium Alloy Sputtering Target (SiCr(72/28wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This sputtering target requires operation within specified power density and pressure ranges to achieve stoichiometric film transfer and prevent target damage. Adhesion strength exceeding 15 MPa on prepared substrates depends on proper bonding selection and surface finish control.
- Power Density Limits: Operate DC sputtering at 3-15 W/cm² and RF sputtering at 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere to maintain deposition rates of 10-80 nm/min with ±5% thickness uniformity.
- Bonding and Backing Plate Compatibility: Select indium or elastomer bonding with oxygen-free copper or CuCrZr backing plate to ensure thermal and electrical contact during sputtering.
- Substrate Preparation Requirement: Deposited films achieve adhesion strength >15 MPa only on properly prepared substrates per ASTM D4541 pull-off test.
- Purity and Contamination Control: Total metallic impurities below 500 ppm and O+N below 100 ppm minimize film contamination and resistivity variation.
- Grain Size and Density Constraint: Fine-grained microstructure (≤50 µm) and relative density ≥95% of theoretical are required for uniform erosion and consistent deposition.
How does the 99.95% purity of the SiCr(72/28wt%) sputtering target affect the electrical properties of deposited films?
The 99.95% (3N5) purity, with total metallic impurities <500 ppm and O+N <100 ppm, minimizes contamination, which helps maintain low resistivity and good adhesion in deposited films. The source states that deposited films exhibit adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates, and the target is optimized for applications like diffusion barriers and gate electrodes where film purity is critical.
What are the optimal sputtering parameters for the SiCr(72/28wt%) target to achieve uniform film deposition on a 100 mm substrate?
For DC magnetron sputtering, the optimal power density is 3-15 W/cm², and for RF sputtering 1-5 W/cm², under an Ar atmosphere of 0.5-2.0 Pa. Under these conditions, deposition rates of 10-80 nm/min can be achieved with ±5% thickness uniformity across a 100 mm substrate.
What bonding and backing plate options are available for the SiCr(72/28wt%) sputtering target, and how do they affect thermal management?
The target is available with indium bonding or elastomer bonding (optional) and can be mounted on an oxygen-free copper or CuCrZr backing plate (optional). These options are important for thermal management during sputtering, as the backing plate material affects heat dissipation. The maximum power density specifications (3-15 W/cm² DC, 1-5 W/cm² RF) assume proper bonding and backing plate selection to avoid overheating.
The SiCr(72/28wt%) sputtering target offers 99.95% purity with <500 ppm total metallic impurities and ≤50 µm grain size, enabling low-contamination film deposition. Its optimized DC/RF sputtering parameters (3-15 W/cm² DC, 1-5 W/cm² RF) deliver 10-80 nm/min deposition rates with ±5% thickness uniformity on 100 mm substrates, but require confirmed bonding and backing plate options for system compatibility.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination in deposited films, improving resistivity and adhesion.
- Controlled deposition performance: Optimized for DC/RF magnetron sputtering at 3-15 W/cm² DC or 1-5 W/cm² RF under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates and adhesion >15 MPa.
Trade-offs
- Bonding and backing plate dependencies: Requires indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate options, which must be specified and may affect thermal management and system compatibility.
- System compatibility verification needed: Target dimensions (8" diameter x 0.25" thick) and fixed composition (72/28 wt%) must be confirmed against deposition system specifications before ordering to ensure proper fit and process matching.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
