|
Silicon-Aluminum Alloy Sputtering Target (SiAl (90:10 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
This DigitalDocument records the explicit processing, compatibility, and verification constraints for the Atomfair SiAl (90:10 wt%) sputtering target. It is intended to guide deposition qualification and procurement checks rather than to restate product specifications.
- Sputtering Process Envelope: Operate within the stated DC or RF power density and argon pressure ranges during magnetron sputtering to maintain the intended transfer behavior.
- Pre-Order Verification: Confirm the selected SiAl 90:10 wt% composition, purity, dimensions, and bonding type against the deposition system before ordering.
- Mounting Compatibility: Confirm that the selected bonding type and backing plate option are compatible with the deposition system's mounting requirements before installation.
- Substrate Adhesion Requirement: Deposited films exhibit adhesion strength greater than 15 MPa only on properly prepared substrates when tested by ASTM D4541 pull-off.
- Surface and Dimensional Check: Confirm that the machined surface finish (Ra ≤ 0.8 µm) and thickness tolerance (±0.1 mm) are compatible with the deposition system's target holder before installation.
These steps define the procurement and pre-installation verification sequence for the Atomfair SiAl (90:10 wt%) sputtering target. Follow them before mounting the target in a magnetron sputtering system.
Required Equipment: Magnetron sputtering system
- Confirm coating parameters
Confirm the selected composition, dimensions, substrate system, and quantity for the intended coating process. - Verify target specifications
Verify the target purity, composition ratio, dimensions, and bonding requirements against the deposition system before ordering. - Submit inquiry details
Include the model number, target dimensions, purity grade, and required quantity when requesting a quotation. - Check mounting compatibility
Ensure the selected bonding type and backing plate material satisfy the deposition system's mounting requirements before installation.
What are the optimal sputtering parameters for depositing thin films from a SiAl (90:10 wt%) target to achieve high uniformity and stoichiometry control?
For DC magnetron sputtering, use a power density of 3–15 W/cm²; for RF, use 1–5 W/cm², under an argon atmosphere of 0.5–2.0 Pa. Under these conditions, deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate are achievable, and the stoichiometric transfer is controlled to within ±2 at% of the target composition.
What bonding and backing plate options are available for the 8-inch SiAl target to ensure compatibility with different magnetron sputtering systems?
The target can be supplied with indium bonding or elastomer bonding, and the backing plate is available in oxygen-free copper or CuCrZr alloy. These options allow integration with a variety of magnetron sputtering systems; the appropriate choice should be confirmed against the specific system's clamping and cooling requirements.
How does the fine grain size (≤50 µm) of the SiAl (90:10) target influence sputtering performance and film uniformity?
The ≤50 µm fine-grained microstructure, produced by vacuum induction melting and casting, promotes uniform erosion across the target surface and reduces arcing during sputtering. This contributes to consistent deposition rates and the stated ±5% thickness uniformity, while also minimizing particulate contamination in the deposited films.
The SiAl (90:10 wt%) sputtering target provides 99.99% purity with ≤50 µm grain size and ≥95% relative density, optimized for DC/RF magnetron sputtering to achieve uniform films with ±5% thickness uniformity and adhesion >15 MPa. The target requires careful specification matching for bonding type and backing plate to ensure compatibility with the deposition system.
Positive
- High Purity with Low Impurities: 99.99% (4N) purity with total metallic impurities <100 ppm and O+N <20 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized Deposition Uniformity: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under specified DC/RF sputtering conditions.
Trade-offs
- Requires System Compatibility Check: Target dimensions, bonding type (indium or elastomer), and backing plate material must be verified against the deposition system before ordering to ensure fit and performance.
- Operating Parameter Sensitivity: Optimal film quality depends on strict adherence to DC power density 3-15 W/cm² or RF 1-5 W/cm² and Ar pressure 0.5-2.0 Pa; deviations may reduce uniformity or adhesion.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
