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Platinum-Manganese Alloy Sputtering Target (PtMn)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This target requires controlled storage in a dry, inert atmosphere to prevent surface oxidation and contamination. Deposition must be performed under 0.5-2.0 Pa Ar atmosphere with power density limits of 3-15 W/cm² (DC) or 1-5 W/cm² (RF) to avoid target cracking or delamination.
- Environmental Sensitivity: Store the target in a vacuum desiccator or argon-filled glovebox to minimize moisture and oxygen exposure that can degrade surface quality.
- Power Density Limit: Do not exceed 15 W/cm² for DC sputtering or 5 W/cm² for RF sputtering to prevent thermal stress-induced cracking or bond failure.
- Bonding Integrity: Indium or elastomer bonding must be selected based on substrate temperature and power load to maintain thermal contact and avoid debonding during deposition.
- Substrate Preparation: Achieve adhesion strength >15 MPa only on properly cleaned and pre-sputtered substrates free of organic residues and native oxides.
This procedure covers mounting the PtMn target into a magnetron sputtering system and running an initial deposition cycle. Proper handling and power ramping are critical to avoid target damage and ensure film uniformity.
Required Equipment: Magnetron sputtering system with DC/RF power supply, Argon gas supply (99.999% purity), Vacuum desiccator or glovebox for target storage
- Inspect target surface
Inspect the target surface for visible scratches, discoloration, or contamination before mounting. - Mount target onto backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the selected indium or elastomer bonding method. - Install assembly into sputtering chamber
Install the bonded target assembly into the magnetron sputtering chamber and secure all electrical and cooling connections. - Evacuate chamber to base pressure
Evacuate the chamber to a base pressure below 5×10⁻⁶ Torr to remove residual moisture and oxygen. - Introduce argon process gas
Introduce argon process gas to achieve a working pressure of 0.5-2.0 Pa for stable plasma ignition. - Ramp power gradually to target density
Ramp DC power gradually to 3-15 W/cm² or RF power to 1-5 W/cm² over 5 minutes to avoid thermal shock. - Pre-sputter target for surface cleaning
Pre-sputter the target for 10 minutes with shutter closed to remove any surface oxide layer before depositing onto the substrate.
What are the recommended DC and RF power density ranges for sputtering the PtMn alloy target to maintain stoichiometric transfer and deposition rate?
For DC magnetron sputtering, the recommended power density is 3–15 W/cm²; for RF, 1–5 W/cm². Operation under 0.5–2.0 Pa Ar atmosphere yields deposition rates of 10–80 nm/min with thickness uniformity ±5% across a 100 mm substrate and composition tolerance within ±2 at%.
What bonding and backing plate options are available for the PtMn target to customize thermal and mechanical performance?
The target is available with optional indium bonding or elastomer bonding, and backing plates in oxygen-free copper or CuCrZr. These options allow customization for thermal conductivity and mechanical support based on specific sputtering system requirements.
What are the relative density and grain size specifications of the PtMn target and how do they affect sputtering performance?
The target has a relative density ≥95% of theoretical and an average grain size ≤50 µm. These fine-grained, high-density characteristics promote uniform erosion, consistent deposition rates, and reduced particle generation during sputtering.
The 99.95% pure PtMn alloy sputtering target with ≤50 µm grain size and ≥95% relative density enables low-contamination, uniform deposition at 10–80 nm/min under DC/RF magnetron sputtering. Its operational parameters (3–15 W/cm² DC, 1–5 W/cm² RF, 0.5–2.0 Pa Ar) and optional bonding/backing plate configurations require system-specific confirmation to ensure optimal performance and fit.
Positive
- High Purity and Low Contamination: With 99.95% purity and total metallic impurities below 500 ppm plus O+N below 100 ppm, the target minimizes film contamination, enabling improved resistivity and adhesion in deposited coatings.
- Fine-Grained Microstructure for Uniform Sputtering: Grain size ≤50 µm and relative density ≥95% of theoretical promote uniform erosion and stable deposition rates, contributing to ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Operating Parameter Sensitivity: The target is optimized for DC/RF sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar; deviations from these ranges may compromise deposition rate, film stoichiometry, or uniformity.
- System Compatibility Verification Required: The target dimensions (2 in diameter x 0.125 in thickness) and optional bonding/backing plate configurations require confirmation against the user's sputtering system to ensure proper fit and thermal management.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
