PdNi 90:10 Alloy Sputtering Target 99.95% ATOMFAIR®

$730.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade PdNi (90:10 At%) sputtering target, 99.95% purity, 2 in diameter x 2 mm thick, for DC/RF magnetron deposition in lab workflows. Order now.

Palladium-Nickel Alloy Sputtering Target (PdNi (90:10 At%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Palladium-Nickel Alloy Sputtering Target (PdNi (90:10 At%)) combines the PdNi (90:10 At%) alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 2 mm.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • PdNi (90:10 At%) alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for electrode, contact and catalytic coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-NI-PDNS
Material / Formula PdNi (90:10 At%)
Purity 99.95%
Target Size 2 indiameter x 2 mm
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires operation within specified power density and argon pressure ranges to achieve stoichiometric film transfer and thickness uniformity. Bonding type and backing plate material must be selected to match the deposition system's thermal and mechanical requirements.

  • Power Density Constraint: Operate DC magnetron sputtering at 3-15 W/cm² or RF at 1-5 W/cm² to maintain deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates.
  • Atmosphere Constraint: Maintain argon pressure between 0.5-2.0 Pa during sputtering to ensure stable plasma and film quality.
  • Adhesion Constraint: Deposited films achieve adhesion strength greater than 15 MPa per ASTM D4541 on properly prepared substrates.
  • Purity Constraint: Total metallic impurities below 500 ppm and oxygen plus nitrogen below 100 ppm minimize contamination in deposited films.
  • Density and Grain Size Constraint: Relative density must be at least 95% of theoretical with grain size ≤50 µm to ensure uniform sputtering behavior.

How does the 99.95% purity level of this PdNi target influence the electrical resistivity and adhesion of sputtered films?

The 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, which improves deposited film resistivity and adhesion. Deposited films achieve adhesion strength >15 MPa (ASTM D4541) on properly prepared substrates, a direct result of the low impurity level.

What are the available bonding and backing plate configurations for this PdNi sputtering target?

The target supports optional indium bonding or elastomer bonding, and backing plates made of oxygen-free copper or CuCrZr. These options allow integration with various magnetron sputtering systems and thermal management requirements.

What manufacturing method and surface finish specifications ensure consistent sputtering performance of this PdNi target?

The target is manufactured by vacuum induction melting and casting, achieving a relative density ≥95% and fine grain size ≤50 µm. The surface is machined to Ra ≤0.8 µm, which promotes uniform erosion and reduces arcing during sputtering.

The PdNi (90:10 At%) sputtering target (SKU AF-NI-S-PDNI-9995-HQVF) offers a 99.95% purity alloy with fine grain size ≤50 µm and ≥95% relative density, enabling stoichiometric film transfer within ±2 at% under optimized DC/RF magnetron sputtering conditions. Operational constraints include a maximum power density of 15 W/cm² (DC) and 5 W/cm² (RF), requiring careful power management to avoid target cracking, and mandatory bonding selection (indium or elastomer) for thermal management in high-power applications.

Positive

  • High-purity alloy with fine grain structure: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm, combined with grain size ≤50 µm and ≥95% relative density, minimizes film contamination and supports uniform deposition with ±5% thickness uniformity across 100 mm substrates.
  • Optimized for DC/RF magnetron sputtering: Operates at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates, suitable for electrode, contact, and catalytic coatings.

Trade-offs

  • Power density limits require careful control: Maximum power density of 15 W/cm² (DC) and 5 W/cm² (RF) restricts high-rate deposition; exceeding these limits risks target cracking or thermal damage, necessitating precise power management and optional bonding (indium or elastomer) for heat dissipation.
  • Bonding and backing plate selection mandatory: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional but required for thermal and mechanical stability under sustained sputtering; improper selection may lead to delamination or reduced target lifetime.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).