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Niobium-Aluminum Alloy Sputtering Target (NbAl(90:10wt))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target must be stored in a dry, inert atmosphere to prevent surface oxidation and moisture adsorption. Deposition requires a vacuum environment with Ar atmosphere at 0.5-2.0 Pa and power density within 3-15 W/cm² (DC) or 1-5 W/cm² (RF) to avoid target cracking or delamination.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can degrade the target surface, requiring storage in a desiccator or vacuum-sealed container.
- Power Density Limit: Exceeding the maximum power density of 15 W/cm² (DC) or 5 W/cm² (RF) may cause thermal stress, leading to target cracking or bond failure.
- Bonding Integrity: Indium or elastomer bonding must be verified for thermal contact integrity before use to prevent hot spots and non-uniform sputtering.
- Substrate Preparation: Deposited film adhesion strength >15 MPa (ASTM D4541) requires properly cleaned and prepared substrates, free of organic residues and native oxides.
This procedure covers target mounting, chamber pump-down, and initial sputtering for the NbAl alloy target. Proper bonding verification and power ramping are critical to prevent thermal damage.
Required Equipment: Magnetron sputtering system with DC/RF power supply, Vacuum pump system capable of base pressure <1e-4 Pa, Argon gas supply with mass flow controller
- Inspect Target and Bonding
Inspect the target surface for cracks, chips, or discoloration and verify that the indium or elastomer bond layer is uniform and free of voids. - Mount Target in Sputter Gun
Mount the target onto the sputter gun using the appropriate backing plate, ensuring thermal contact is maintained across the entire bond interface. - Evacuate Chamber to Base Pressure
Evacuate the deposition chamber to a base pressure below 1e-4 Pa to remove residual water vapor and oxygen before introducing argon. - Set Argon Flow and Pressure
Set the argon flow rate to achieve a process pressure of 0.5-2.0 Pa, as measured by a capacitance manometer. - Pre-sputter to Clean Target Surface
Pre-sputter the target for 5-10 minutes at low power (e.g., 3 W/cm² DC) with the shutter closed to remove any surface oxide layer. - Ramp Power to Deposition Conditions
Ramp the DC power density gradually to the desired deposition value between 3-15 W/cm², monitoring target temperature and reflected power. - Deposit Film and Verify Uniformity
Deposit the film onto the substrate, then verify thickness uniformity across a 100 mm substrate is within ±5% using profilometry or ellipsometry.
What sputtering power and Ar pressure should be used to achieve a deposition rate of 50 nm/min and stoichiometric transfer from the NbAl(90:10) target?
For DC magnetron sputtering, use 3-15 W/cm² power density; for RF, use 1-5 W/cm², both under 0.5-2.0 Pa Ar atmosphere. The source indicates deposition rates of 10-80 nm/min under these conditions, with stoichiometric transfer to deposited films within ±2 at% when optimized. The 99.95% purity and ≤50 µm grain size support controlled film composition.
Over what substrate diameter can this NbAl target achieve ±5% thickness uniformity?
The target delivers ±5% thickness uniformity across a 100 mm substrate under the specified DC/RF sputtering conditions. The fine grain size ≤50 µm and machined surface finish (Ra ≤0.8 µm) contribute to uniform material erosion and film deposition.
What are the critical dimensional and surface finish tolerances for mounting this target in a magnetron sputtering system?
The target has a thickness tolerance of ±0.1 mm and a machined surface finish of Ra ≤0.8 µm. These specifications are essential for proper thermal contact with the backing plate and to prevent arcing. The target is supplied as 2 in diameter x 0.25 in and may be bonded to an oxygen-free copper or CuCrZr backing plate using indium or elastomer bonding.
This NbAl(90:10wt) sputtering target offers 99.95% purity and fine-grained microstructure for uniform film deposition, but requires careful parameter optimization and specification of bonding/backing plate for integration into existing sputtering systems.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination in deposited films to improve resistivity and adhesion.
- Optimized sputtering performance: Specified for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Parameter-dependent stoichiometry: Stoichiometric transfer to deposited films within ±2 at% requires careful optimization of power density, Ar pressure, and other sputtering conditions; not plug-and-play.
- Optional bonding and backing plate: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are optional and must be specified to match the thermal and mechanical requirements of the deposition system, adding procurement complexity.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
