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Nickel-Molybdenum Alloy Sputtering Target (NiMo (85:15 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This document defines the operational and integration constraints for the Nickel-Molybdenum Alloy Sputtering Target (NiMo 85:15 at%). It covers deposition parameter limits, mounting compatibility, and substrate preparation expectations for reliable film performance.
- Deposition parameter limits: Sputtering must be performed with a DC power density of 3-15 W/cm² or an RF power density of 1-5 W/cm² in a 0.5-2.0 Pa argon atmosphere.
- Mounting and bonding compatibility: The target requires indium or elastomer bonding to an oxygen-free copper or CuCrZr backing plate for compatible mounting in the deposition system.
- Substrate preparation requirement: Deposited film adhesion strength above 15 MPa is only expected on properly prepared substrates.
- Deposition uniformity expectation: Film thickness uniformity of ±5% across a 100 mm substrate is expected only under optimized sputtering conditions.
This procedure describes the pre-installation checks and process setup steps for using the NiMo (85:15 at%) sputtering target. It is intended for DC/RF magnetron sputtering in an argon atmosphere.
Required Equipment: DC/RF magnetron sputtering system, Vacuum chamber, Argon gas supply, Substrate holder
- Confirm target specifications
Confirm the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering. - Verify mounting hardware
Verify that the backing plate material and bonding type are compatible with the sputtering system's mounting and power density requirements. - Set argon pressure
Set the process chamber to an argon pressure of 0.5-2.0 Pa before igniting the plasma. - Select power density
Select a DC power density of 3-15 W/cm² or an RF power density of 1-5 W/cm² based on the deposition system configuration. - Monitor film quality
Monitor deposited film thickness uniformity and adhesion on prepared substrates to verify process stability.
What is the recommended power density range and expected deposition rate for the NiMo (85:15 at%) sputtering target under DC and RF magnetron sputtering?
The NiMo (85:15 at%) target is optimized for DC sputtering at 3–15 W/cm² and RF sputtering at 1–5 W/cm² under 0.5–2.0 Pa Ar atmosphere. Under these conditions, deposition rates of 10–80 nm/min are achievable with ±5% thickness uniformity across a 100 mm substrate, enabling controlled stoichiometric film growth.
What adhesion strength can be expected from NiMo (85:15 at%) sputtered films, and what test standard is used to verify it?
Deposited NiMo films exhibit adhesion strength greater than 15 MPa as measured by the ASTM D4541 pull-off test on properly prepared substrates. This performance makes the target suitable for demanding applications such as diffusion barriers, gate electrodes, and high-temperature protective coatings.
What bonding and backing plate options are available for the NiMo sputtering target, and how do they affect system compatibility?
The target offers two bonding options—indium bonding and elastomer bonding—and two backing plate materials—oxygen-free copper and CuCrZr—both optional. Selection depends on thermal management needs and compatibility with the sputtering system's clamping and cooling mechanism; indium bonding is recommended for high-power DC applications, while elastomer bonding facilitates easier target replacement.
This NiMo (85:15 at%) sputtering target offers 99.95% purity with low interstitial impurities, fine grain size ≤50 µm, and ≥97% theoretical density, enabling stoichiometric film deposition with ±2 at% composition accuracy and adhesion strength >15 MPa for diffusion barrier and electrode applications, provided sputtering parameters are optimized for the 2-inch diameter target and system configuration.
Positive
- High purity and low impurities: 99.95% purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Controlled stoichiometry and uniformity: Composition transfer within ±2 at% and thickness uniformity of ±5% across 100 mm substrates enable reproducible film properties for advanced coatings.
Trade-offs
- Sensitive to sputtering conditions: Rated deposition rates and uniformity require optimized DC/RF power density (3-15 or 1-5 W/cm²) and Ar pressure (0.5-2.0 Pa); off-parameter operation may degrade film quality.
- Bonding and backing plate selection: Indium or elastomer bonding and backing plate material (oxygen-free copper or CuCrZr) are optional but must be specified to match thermal and mechanical requirements of the deposition system.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
