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Nickel-Chromium-Iron Alloy Sputtering Target (NiCrFe (72:14:14 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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NiCrFe alloy sputtering targets require vacuum deposition infrastructure and strict power and atmosphere control to avoid process failure. Target integrity depends on verifying composition, dimensions, bonding, backing plate, and substrate preparation against the deposition tool before use.
- Vacuum-only operation: Use the target only inside a vacuum magnetron sputtering system because it is supplied for vacuum coating workflows and ambient exposure is not part of the intended process.
- Power and atmosphere control: Maintain the sputter source within the stated DC/RF power density ranges and argon pressure envelope to prevent thermal or plasma-induced damage.
- Bonding and backing plate compatibility: Confirm that the optional indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are compatible with the sputter gun's mounting and cooling configuration before installation.
- Substrate preparation: Clean and prepare substrates according to the deposition system's requirements to achieve the stated adhesion performance on the deposited film.
- Stoichiometry verification: Confirm the specified NiCrFe composition ratio before coating because stoichiometric film transfer depends on optimized sputtering conditions.
Install the target only after verifying compatibility with the deposition system's mounting, cooling, and bonding configuration. Operate the sputter source within the specified power and argon pressure envelope to avoid target damage and off-stoichiometry film deposition.
Required Equipment: Magnetron sputtering system, Vacuum deposition chamber, Argon supply with pressure control, Backing plate with compatible bonding
- Confirm system compatibility
Confirm the selected composition, dimensions, substrate system, and quantity against the deposition system before installing the target. - Verify mounting and cooling
Verify that the bonding type and backing plate match the sputter gun's mounting and cooling requirements before mounting. - Set process parameters
Set the argon pressure and the DC/RF power density to the specified ranges for this NiCrFe alloy target before beginning sputtering. - Begin sputtering
Stabilize the chamber atmosphere and power conditions, then begin the coating run while monitoring deposition parameters.
What DC and RF magnetron sputtering parameters are recommended for the NiCrFe (72:14:14 wt%) sputtering target to achieve optimal deposition rates and film uniformity?
For DC sputtering, a power density of 3-15 W/cm² is recommended; for RF sputtering, 1-5 W/cm² is recommended, both under a 0.5-2.0 Pa Ar atmosphere. These conditions yield deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. The fine grain size (≤50 µm) and relative density (≥95% of theoretical) contribute to stable sputtering performance.
What bonding and backing plate configurations are available for the NiCrFe (72:14:14 wt%) sputtering target?
The target offers optional indium bonding or elastomer bonding for thermal and mechanical interface requirements. Backing plate options include oxygen-free copper or CuCrZr. These choices enable integration with different sputtering systems and thermal management needs.
What target specifications must be confirmed before ordering the NiCrFe (72:14:14 wt%) sputtering target to ensure compatibility with a deposition system?
Before ordering, confirm the purity (99.95%), target dimensions (e.g., 4 in diameter x 0.125 in thickness), composition ratio (72:14:14 wt% Ni:Cr:Fe), and bonding requirements (indium or elastomer). Verifying these parameters against the deposition system's specifications prevents compatibility issues and ensures optimal film performance.
The NiCrFe (72:14:14 wt%) sputtering target with 99.95% purity offers controlled stoichiometric transfer and high deposition uniformity for thin-film resistors and diffusion barriers, but requires careful matching of bonding, backing plate, and sputtering parameters to the user's deposition system.
Positive
- High purity with low impurity content: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Supports DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Bonding and backing plate dependencies: Requires optional indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate, adding procurement complexity to match the deposition system's requirements.
- Deposition environment sensitivity: Stoichiometric transfer is only guaranteed within ±2 at% under optimized sputtering conditions; users must confirm target specifications against their system's parameters to avoid film composition drift.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
