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Nickel-Chromium Alloy Sputtering Target (NiCr(80:20 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This document defines the operating and compatibility constraints for the NiCr(80:20 wt%) sputtering target. Use these constraints to verify the target is suitable for the intended deposition process.
- Deposition Process Parameters: Sputter at 3-15 W/cm² DC or 1-5 W/cm² RF under a 0.5-2.0 Pa Ar atmosphere to achieve the stated deposition rate and uniformity.
- Stoichiometric Transfer Constraint: Maintain optimized sputtering conditions to keep the NiCr(80:20 wt%) stoichiometric transfer within ±2 at% in the deposited film.
- Substrate Preparation Requirement: Use properly prepared substrates to achieve deposited film adhesion strength greater than 15 MPa by ASTM D4541 pull-off testing.
- Mounting and Bonding Constraint: Confirm indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate selection against the deposition system before ordering.
This procedure describes the setup and operation of the NiCr(80:20 wt%) sputtering target in a magnetron deposition system. Follow the stated power-density and argon-pressure ranges to achieve the specified deposition behavior.
Required Equipment: DC/RF magnetron sputtering system, Argon gas supply
- Confirm compatibility
Confirm the target composition, dimensions, and bonding requirements against the deposition system before mounting. - Install target
Install the target using the selected backing plate and bonding type (indium or elastomer). - Set argon pressure
Set the sputtering chamber argon pressure to 0.5-2.0 Pa before deposition. - Apply sputtering power
Apply DC power at 3-15 W/cm² or RF power at 1-5 W/cm² to initiate deposition. - Monitor deposition
Monitor the deposition rate within 10-80 nm/min and verify thickness uniformity across a 100 mm substrate.
What is the stoichiometric transfer accuracy of NiCr(80:20 wt%) films deposited with this sputtering target?
Under optimized sputtering conditions, the target enables stoichiometric transfer to deposited films within ±2 at%. This is supported by the NiCr(80:20 wt%) composition, 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and preserving film resistivity and adhesion.
What target size and bonding options are available for this NiCr sputtering target to ensure compatibility with my deposition system?
The target is supplied in two size options: 3 in diameter x 0.25 in and 2 in diameter x 0.25 in. Bonding options include indium bonding or elastomer bonding, and backing plate materials are oxygen-free copper or CuCrZr. Confirm dimensions, bonding type, and backing plate material against your system before ordering.
What are the recommended sputtering parameters and infrastructure requirements for this NiCr target?
The target is optimized for DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under an Ar atmosphere of 0.5–2.0 Pa. Deposition rates of 10–80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate. Ensure your system can maintain these pressure, power, and atmosphere conditions for optimal film quality.
This NiCr(80:20 wt%) sputtering target offers 99.95% purity with fine grain structure and optimized deposition rates for DC/RF magnetron sputtering, requiring careful system compatibility verification for bonding and backing plate options.
Positive
- High purity and fine grain: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, combined with ≤50 µm grain size and ≥95% relative density, minimizing contamination and improving film resistivity and adhesion.
- Optimized deposition performance: DC/RF power density ranges (3-15 W/cm² DC, 1-5 W/cm² RF) under 0.5-2.0 Pa Ar yield deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate, suitable for thin-film resistors, diffusion barriers, and magnetic devices.
Trade-offs
- System compatibility verification needed: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are optional but must be confirmed against the sputtering system, along with target dimensions and composition, before ordering to ensure proper fit and performance.
- Operating parameter constraints: Optimal deposition requires strict adherence to power density limits (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure range (0.5-2.0 Pa); deviations risk reduced deposition rate, uniformity, or target damage.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
