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Nickel-Vanadium Alloy Sputtering Target (NiV (93:7 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This document defines operating and compatibility constraints for the NiV (93:7 wt%) alloy sputtering target. It applies only to vacuum coating workflows using DC or RF magnetron sputtering.
- Deposition system verification: Confirm the target purity, dimensions, composition ratio, substrate system, and bonding requirements against the deposition system before installation.
- Sputtering atmosphere requirement: Maintain an argon atmosphere of 0.5 to 2.0 Pa during DC or RF magnetron sputtering deposition.
- Power density limit: Operate within the rated power density range of 3 to 15 W/cm² for DC sputtering or 1 to 5 W/cm² for RF sputtering.
- Bonding and backing plate compatibility: Select indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate as required by the deposition system.
- Film quality control: Control deposition parameters to maintain a 10 to 80 nm/min deposition rate and ±5% thickness uniformity across a 100 mm substrate.
This procedure covers the preparation and operation of the NiV alloy target as a vacuum coating component. It requires a compatible backing plate, bonding method, argon atmosphere, and DC or RF power supply.
Required Equipment: Magnetron sputtering deposition system, DC/RF power supply
- Verify target and system compatibility
Confirm the target purity, dimensions, composition ratio, substrate system, and bonding requirements against the deposition system before installation. - Confirm bonding configuration
Confirm that the target is bonded to the selected backing plate with either indium or elastomer bonding before installation. - Install the target assembly
Install the bonded target assembly into the magnetron sputtering deposition system. - Set the sputtering atmosphere
Set the chamber argon pressure to 0.5 to 2.0 Pa before initiating deposition. - Apply sputtering power
Apply DC power at 3 to 15 W/cm² or RF power at 1 to 5 W/cm² to achieve the intended deposition rate. - Monitor deposition quality
Monitor deposition rate and thickness uniformity to maintain 10 to 80 nm/min with ±5% uniformity across a 100 mm substrate.
What deposition rate and thickness uniformity can be expected from the NiV 93:7 sputtering target under DC magnetron sputtering?
Under optimized DC magnetron sputtering at 3–15 W/cm² and 0.5–2.0 Pa Ar atmosphere, the target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. These values are based on the product's specified fine-grained microstructure (≤50 µm) and ≥95% relative density.
What are the recommended sputtering parameters and bonding options for integrating this NiV target into a DC/RF magnetron system?
The target is optimized for DC or RF magnetron sputtering at power densities of 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar atmosphere. Bonding options include indium bonding or elastomer bonding, and the backing plate can be oxygen-free copper or CuCrZr, both chosen based on system compatibility and thermal management requirements.
What purity, density, and grain size specifications are critical for thin-film performance of this NiV 93:7 sputtering target?
The target offers 99.95% purity (3N5) with total metallic impurities <500 ppm and O+N <100 ppm, relative density ≥95% of theoretical, and a fine grain size ≤50 µm. Surface finish is machined to Ra ≤ 0.8 µm, ensuring low contamination and consistent film resistivity and adhesion in thin-film resistor and diffusion barrier applications.
The Atomfair NiV (93:7 wt%) sputtering target with 99.95% purity and 2-inch diameter is optimized for DC/RF magnetron sputtering, delivering high-purity films with controlled stoichiometry for thin-film resistors and diffusion barriers, but requires precise adherence to specified power density and pressure conditions to maintain film quality.
Positive
- High Purity with Low Impurities: The 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination in deposited films, improving resistivity consistency and adhesion.
- Optimized Sputtering Performance: The target is calibrated for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across 100 mm substrates.
Trade-offs
- Strict Parameter Control Required: Optimal film stoichiometry and uniformity depend on strict adherence to specified power density, pressure, and substrate conditions; deviations may alter composition beyond ±2 at%.
- Bonding and Backing Plate Compatibility: The target requires selection of indium or elastomer bonding and backing plate material (oxygen-free copper or CuCrZr) based on system compatibility, adding procurement lead time and cost.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
