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Nickel-Platinum Alloy Sputtering Target (NiPt(99.95 %))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This document specifies operational constraints for the NiPt alloy sputtering target. These constraints cover bonding, mounting, sputtering atmosphere, power limits, and substrate preparation.
- Pre-installation specification check: Verify target dimensions, purity, composition ratio, and bonding requirements against the deposition system before installation.
- Bonding and backing plate compatibility: Select indium or elastomer bonding and a compatible backing plate material according to the deposition system requirements.
- Power density limit: Maintain DC power density within 3-15 W/cm² and RF power density within 1-5 W/cm² during sputtering.
- Sputtering atmosphere: Keep argon pressure between 0.5 and 2.0 Pa during magnetron sputtering.
- Substrate preparation requirement: Deposit the NiPt film only onto properly prepared substrates to achieve the stated adhesion strength.
This procedure describes how to prepare and condition the NiPt sputtering target for magnetron deposition. It covers target inspection, mounting, chamber setup, and sputtering parameter adjustment.
Required Equipment: DC/RF magnetron sputtering system, Argon gas supply
- Confirm specifications
Verify target purity, dimensions, composition ratio, and bonding requirements against the deposition system specification before installation. - Inspect target surface
Inspect the target surface for damage and verify that the machined finish meets Ra ≤ 0.8 µm. - Verify assembly
Verify the target is mounted on the oxygen-free copper or CuCrZr backing plate using the selected indium or elastomer bonding method. - Set chamber atmosphere
Evacuate the chamber and backfill with argon to a pressure between 0.5 and 2.0 Pa. - Apply sputtering power
Set DC power density to 3-15 W/cm² or RF power density to 1-5 W/cm² and ignite the plasma. - Monitor deposition
Adjust the deposition process to achieve 10-80 nm/min and confirm thickness uniformity within ±5% over a 100 mm substrate.
How does the 99.95% purity and fine grain size of the NiPt(99.95%) sputtering target affect deposited film adhesion and uniformity?
The 99.95% purity (3N5) with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion. The fine grain size ≤50 µm contributes to uniform sputtering, achieving a thickness uniformity of ±5% across a 100 mm substrate and adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
What bonding and backing plate options are available for the NiPt(99.95%) sputtering target to match different sputtering power regimes?
The target offers indium bonding or elastomer bonding options, with backing plate choices of oxygen-free copper or CuCrZr. Indium bonding is suitable for high-power DC sputtering (3-15 W/cm²) due to its superior thermal transfer, while elastomer bonding is appropriate for lower-power RF sputtering (1-5 W/cm²). The oxygen-free copper backing plate provides excellent thermal conductivity for efficient heat dissipation.
What are the recommended operating conditions (power density and pressure) for DC and RF magnetron sputtering of the NiPt(99.95%) target to minimize contamination?
For DC magnetron sputtering, use a power density of 3-15 W/cm² and for RF sputtering use 1-5 W/cm², under an Ar atmosphere pressure of 0.5-2.0 Pa. These conditions are optimized to achieve a low contamination level with O+N <100 ppm and high film purity, as specified in the product's performance features.
The NiPt(99.95%) alloy sputtering target (3 in diameter x 0.125 in) offers high purity (99.95%) with low metallic and gas impurities, fine grain size (≤50 µm), and optimized DC/RF magnetron sputtering conditions for controlled deposition rates (10–80 nm/min) with ±5% thickness uniformity across 100 mm substrates. However, its performance depends on correct selection of bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr), and requires precise substrate preparation to achieve adhesion strength >15 MPa.
Positive
- High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Controlled deposition uniformity: Achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate under optimized DC/RF magnetron sputtering conditions, suitable for thin-film resistors, diffusion barriers, and magnetic thin-film devices.
Trade-offs
- Infrastructure-dependent sputtering conditions: Requires precise DC (3–15 W/cm²) or RF (1–5 W/cm²) power densities and 0.5–2.0 Pa Ar atmosphere; deviations degrade deposition rate and film uniformity.
- Optional bonding and backing plate complexity: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional but must be matched to the deposition system, adding procurement steps and potential compatibility issues.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
