Nickel-Niobium-Tantalum Sputtering Target 3in×3mm ATOMFAIR®

$620.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade NiNbTa (60/30/10 at%) sputtering target, 99.9% pure, 3in x 3mm, for DC/RF magnetron deposition and vacuum coating in lab. Order now.

Nickel-Niobium-Tantalum Alloy Sputtering Target (NiNbTa (60/30/10 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Nickel-Niobium-Tantalum Alloy Sputtering Target (NiNbTa (60/30/10 at%)) combines the NiNbTa (60/30/10 at%) alloy composition with a source-listed purity of 99.9% and a target size of 3 indiameter x 3 mm.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • NiNbTa (60/30/10 at%) alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for diffusion barriers, gate electrodes and high-temperature protective coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-MT-NINS
Material / Formula NiNbTa (60/30/10 at%)
Purity 99.9%
Target Size 3 indiameter x 3 mm
Relative Density ≥97% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Powder metallurgy / Vacuum hot pressing
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires precise control of deposition parameters to achieve stoichiometric transfer and film adhesion. The target must be mounted with appropriate bonding and backing plate for thermal management during sputtering.

  • Sputtering Parameter Constraints: Operate the target within DC power density of 3-15 W/cm² or RF power density of 1-5 W/cm² under an argon atmosphere of 0.5-2.0 Pa to maintain deposition rate and uniformity.
  • Substrate Preparation Requirement: Prepare substrates according to ASTM D4541 standards to achieve deposited film adhesion strength exceeding 15 MPa.
  • Bonding and Backing Plate Constraints: Select indium or elastomer bonding with an oxygen-free copper or CuCrZr backing plate to ensure adequate thermal dissipation during sputtering.
  • Microstructural Constraints: Maintain grain size at or below 50 µm and relative density at or above 97% of theoretical to minimize porosity and ensure uniform sputtering.

What deposition rate and thickness uniformity can be expected from the NiNbTa (60/30/10 at%) sputtering target under optimized DC magnetron sputtering conditions?

Under optimized DC magnetron sputtering at power densities of 3–15 W/cm² and an Ar atmosphere of 0.5–2.0 Pa, the NiNbTa target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. These specifications are based on the product's performance features and technical parameters.

What bonding and backing plate configurations are available for the NiNbTa sputtering target, and how do they affect system integration?

The NiNbTa target is available with optional Indium bonding or Elastomer bonding, and backing plate options of oxygen-free copper or CuCrZr. These configurations allow the target to be tailored to specific sputtering system thermal management and mechanical mounting requirements, as detailed in the technical specifications.

What purity and impurity levels does the NiNbTa (60/30/10 at%) sputtering target meet, and how do they influence film quality in protective coating applications?

The target meets 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination. This high purity level is critical for achieving low resistivity, strong adhesion (>15 MPa per ASTM D4541), and reliable performance in diffusion barriers, gate electrodes, and high-temperature protective coatings as specified in the product description.

This NiNbTa (60/30/10 at%) sputtering target offers 99.9% purity and fine-grained microstructure for stoichiometric film deposition, but requires careful specification of bonding and backing plate options and optimized sputtering conditions to achieve the stated performance.

Positive

  • Precise stoichiometric composition control: NiNbTa (60/30/10 at%) alloy transfers stoichiometry to deposited films within ±2 at% under optimized sputtering conditions, enabling reliable film composition.
  • High purity with low contamination: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving film resistivity and adhesion.

Trade-offs

  • Requires bonding and backing plate specification: Bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are optional but must be specified to ensure compatibility with the sputtering system; otherwise the target may not be ready for use.
  • Deposition performance depends on optimized conditions: Stated deposition rates of 10-80 nm/min and ±5% thickness uniformity are only achieved under optimized DC/RF power and Ar pressure ranges, requiring careful process control.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).