FREE SHIPPING with $59 or More. New Customer? Inquire for Major Discount & Free Samples! Online Payments & POs Accepted.

Nickel-Iron Alloy Sputtering Target 99.9% 2in ATOMFAIR®

Nickel-Iron Alloy Sputtering Target 99.9% 2in ATOMFAIR®

$230.00

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Research-grade NiFe (36/64 wt%) sputtering target, 99.9% purity, 2in diameter × 0.125in thick, for controlled DC/RF magnetron deposition. Order now.

SKU: AF-FE-S-NIFE-9999-9NRR
Category:
Tags: , , , ,
Brands:

Nickel-Iron Alloy Sputtering Target (NiFe ( 36/64 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Nickel-Iron Alloy Sputtering Target (NiFe ( 36/64 wt%)) combines the NiFe ( 36/64 wt%) alloy composition with a source-listed purity of 99.9% and a target size of 2indiameterx 0.125in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.
Performance Features
  • NiFe ( 36/64 wt%) alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for diffusion barriers, gate electrodes and high-temperature protective coatings, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-FE-NIFS
Material / Formula NiFe ( 36/64 wt%)
Purity 99.9%
Target Size 2indiameterx 0.125in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target must be operated within specified power density and argon pressure ranges to achieve stoichiometric film transfer and avoid target damage. Compatibility with bonding type and backing plate must be confirmed with the deposition system prior to use.

  • Sputtering Parameters: Operate at DC 3-15 W/cm² or RF 1-5 W/cm² under 0.5-2.0 Pa Ar atmosphere to maintain target integrity and film uniformity.
  • Bonding Compatibility: Select indium or elastomer bonding based on system thermal and vacuum requirements to ensure proper thermal and electrical contact.
  • Backing Plate Compatibility: Use oxygen-free copper or CuCrZr backing plate to match the target dimensions and thermal management needs.
  • Substrate Preparation: Prepare substrates to achieve adhesion strength >15 MPa as per ASTM D4541 on properly cleaned and conditioned surfaces.
  • Pre-Order Confirmation: Verify target purity, dimensions, composition ratio, and bonding requirements against the deposition system before ordering.

What is the maximum permissible oxygen and nitrogen impurity concentration in the NiFe (36/64 wt%) sputtering target?

The combined oxygen and nitrogen impurity level is specified as <200 ppm, which is critical for minimizing contamination in deposited films used in diffusion barriers or gate electrodes. Total metallic impurities are held below 1000 ppm to maintain film resistivity and adhesion performance.

Can the 2-inch diameter target be bonded to an oxygen-free copper backing plate for high-power RF sputtering?

Yes, the target offers optional indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate, allowing direct integration into RF sputtering systems operating at 1–5 W/cm². The fine-grained microstructure (≤50 µm) and machined surface finish (Ra ≤0.8 µm) further support uniform thermal transfer and film thickness uniformity within ±5% across a 100 mm substrate.

What infrastructure is required to achieve the specified adhesion strength of >15 MPa for NiFe films?

Achieving >15 MPa pull-off adhesion per ASTM D4541 requires proper substrate preparation (cleaning and surface activation) and optimized sputtering parameters within the 3–15 W/cm² (DC) power range under 0.5–2.0 Pa Ar atmosphere. The 99.9% purity and ≤50 µm grain size of the target help minimize interfacial defects that degrade adhesion.

The NiFe (36/64 wt%) alloy sputtering target with 99.9% purity and 2-inch diameter by 0.125-inch thickness enables stoichiometric film transfer within ±2 at% under optimized DC/RF magnetron sputtering, suitable for diffusion barriers and gate electrodes in vacuum coating workflows.

Positive

  • High-purity alloy composition: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes film contamination, improving deposited film resistivity and adhesion in sputtering applications.
  • Optimized for DC/RF sputtering: Operates at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate, enabling reproducible thin-film growth.

Trade-offs

  • Bonding and backing plate options: Indium or elastomer bonding requires selection against the deposition system's thermal and mechanical interface, and oxygen-free copper or CuCrZr backing plates must be specified to match power density and cooling requirements.
  • Precise procurement verification needed: The target composition (36/64 wt% NiFe), purity, dimensions, and bonding type must be verified against the deposition system before ordering to avoid compatibility issues with sputtering source geometry or film stoichiometry targets.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

Related Products