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Nickel-Copper-Manganese Alloy Sputtering Target (NiCuMn)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Deposition of this NiCuMn target requires DC/RF magnetron sputtering under a controlled argon atmosphere within the rated power-density limits. Film quality and adhesion depend on substrate preparation and on confirming compatibility of bonding and backing-plate configurations before installation.
- Deposition atmosphere and power limits: Operate the sputtering process at 0.5–2.0 Pa argon while keeping the target power density within 3–15 W/cm² for DC or 1–5 W/cm² for RF mode.
- Bonding and backing plate compatibility: Verify that the selected indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are compatible with the intended deposition system before mounting.
- Substrate preparation requirement: Prepare substrates according to the coating protocol because deposited film adhesion above 15 MPa is only achieved on properly prepared substrates.
- Surface condition maintenance: Maintain the machined target surface finish at Ra ≤ 0.8 µm and protect it from particulate contamination during handling.
- Pre-installation qualification: Confirm the target composition, dimensions, substrate system, and quantity match the intended coating process before ordering or installation.
Qualify the NiCuMn target against the deposition system and process parameters before use. Complete installation, atmosphere conditioning, and power setup in a sequence that preserves target condition and film reproducibility.
Required Equipment: DC/RF magnetron sputtering system
- Confirm process compatibility
Confirm the selected NiCuMn target composition, dimensions, substrate system, and quantity match the intended coating process before installation. - Inspect target surface
Inspect the target surface to verify that the machined finish meets the stated Ra ≤ 0.8 µm specification before mounting. - Set deposition atmosphere
Set the chamber argon pressure to 0.5–2.0 Pa and select DC or RF mode according to the process design. - Set power density
Set the target power density within 3–15 W/cm² for DC or 1–5 W/cm² for RF to initiate deposition. - Deposit onto prepared substrate
Deposit the film onto a properly prepared substrate to achieve the specified adhesion strength and thickness uniformity. - Verify film quality
Verify the deposited film exhibits adhesion strength greater than 15 MPa by ASTM D4541 pull-off and thickness uniformity within ±5% across a 100 mm substrate.
How does the 99.9% purity and specified oxygen/nitrogen impurity limits of the NiCuMn sputtering target affect deposited film resistivity and adhesion?
The 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion. Lower impurity levels reduce defect density in NiCuMn thin films, directly enhancing electrical conductivity and long-term stability in applications such as thin-film resistors and diffusion barriers.
What are the recommended sputtering parameters for achieving optimal deposition rate and thickness uniformity with the NiCuMn target?
The target is optimized for DC/RF magnetron sputtering at 3–15 W/cm² (DC) or 1–5 W/cm² (RF) under 0.5–2.0 Pa Ar atmosphere, achieving deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. Performers should confirm compatibility with their substrate size, system geometry, and power delivery capabilities.
What manufacturing process is used to produce the NiCuMn sputtering target, and how does it affect target density and grain size?
The target is fabricated by vacuum induction melting or casting, ensuring a relative density ≥95% of theoretical and a fine grain size ≤50 µm. This manufacturing approach yields a dense, fine-grained microstructure that promotes stable sputtering rates and consistent film stoichiometry across extended deposition runs.
This NiCuMn alloy sputtering target offers 99.9% purity with fine grain size and high density, delivering thin films with >15 MPa adhesion and ±5% thickness uniformity under optimized DC/RF magnetron sputtering conditions.
Positive
- High purity and low impurity levels: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm, minimizing contamination in deposited films and improving resistivity and adhesion.
- Strong adhesion and thickness uniformity: Deposited films exhibit adhesion strength >15 MPa (ASTM D4541) and ±5% thickness uniformity across a 100 mm substrate, suitable for thin-film resistors and diffusion barriers.
Trade-offs
- Requires precise sputtering parameter optimization: Achieving stoichiometric transfer (±2 at%) and optimal deposition rates (10-80 nm/min) depends on careful control of power density (3-15 W/cm² DC, 1-5 W/cm² RF) and Ar pressure (0.5-2.0 Pa).
- Must confirm compatibility with deposition system: Bonding type (indium or elastomer) and backing plate (oxygen-free copper or CuCrZr) must be verified against the user's sputtering system to avoid process incompatibility.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
