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Iron-Boron Alloy Sputtering Target (Nd2Fe14B)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent oxidation of the reactive Nd2Fe14B alloy. Handle with clean gloves and avoid exposure to moisture or ambient air for extended periods prior to deposition.
- Environmental Sensitivity: The Nd2Fe14B alloy is prone to surface oxidation and hydrogen absorption if stored in humid or oxygen-rich environments.
- Bonding and Backing Plate Compatibility: Indium bonding is recommended for DC sputtering at high power densities, while elastomer bonding may be used for RF sputtering at lower thermal loads.
- Deposition Parameter Constraints: Exceeding the maximum power density of 15 W/cm² (DC) or 5 W/cm² (RF) can cause target cracking or delamination from the backing plate.
This procedure covers mounting, bonding verification, and pre-sputter conditioning of the Nd2Fe14B alloy target for DC/RF magnetron sputtering. Proper installation minimizes arcing and ensures stoichiometric film transfer.
Required Equipment: Glovebox or inert gas purge system, Torque wrench for backing plate screws, DC/RF magnetron sputtering system with Ar gas supply
- Inspect target surface and bonding layer
Inspect the target surface for cracks, chips, or discoloration and verify that the indium or elastomer bonding layer is uniform and free of voids. - Mount target onto backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method and torque the retaining screws to the manufacturer's specification. - Transfer assembly to sputtering chamber
Transfer the bonded target assembly into the sputtering chamber under inert atmosphere or within 10 minutes of exposure to ambient air to minimize surface oxidation. - Evacuate chamber and introduce Ar gas
Evacuate the chamber to a base pressure below 1×10⁻⁴ Pa, then backfill with 99.999% Ar to a working pressure of 0.5–2.0 Pa. - Pre-sputter condition the target surface
Pre-sputter the target at 50% of the intended deposition power for 10–15 minutes with the shutter closed to remove any surface oxide layer. - Set deposition parameters and begin coating
Set the DC power density between 3–15 W/cm² or RF power density between 1–5 W/cm², then open the shutter and deposit the film at a rate of 10–80 nm/min.
What is the achievable deposition rate and thickness uniformity for the Nd2Fe14B sputtering target under DC and RF magnetron sputtering?
Under DC magnetron sputtering at 3–15 W/cm² or RF at 1–5 W/cm² in 0.5–2.0 Pa Ar atmosphere, the target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
What bonding and backing plate configurations are available for the Nd2Fe14B sputtering target?
The target offers optional indium bonding or elastomer bonding, and backing plate options include oxygen-free copper or CuCrZr. The appropriate configuration depends on thermal management requirements and sputtering system compatibility; discussion with the supplier is recommended.
How does the vacuum arc melting manufacturing method influence the grain size and density of the Nd2Fe14B target?
Vacuum arc melting produces a fine-grained structure with grain size ≤50 µm and a relative density ≥93% of theoretical. These attributes minimize particle ejection during sputtering and promote uniform erosion of the target surface.
This Nd2Fe14B sputtering target offers 99.95% purity and fine-grained microstructure for stoichiometric film deposition, but requires careful matching of bonding and backing plate options to the sputtering system.
Positive
- High purity and low impurity levels: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination in deposited films and improving resistivity and adhesion.
- Optimized for magnetic and hydrogen-storage films: Deposited films exhibit adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates, suitable for magnetic, magneto-optical, and hydrogen-storage thin film applications.
Trade-offs
- Sensitivity to sputtering parameters: Stoichiometric transfer of Nd2Fe14B composition is within ±2 at% only under optimized sputtering conditions, requiring precise control of power density, pressure, and substrate temperature.
- Bonding and backing plate requirements: The target is available with indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate options; the user must select and verify compatibility with their deposition system's thermal and mechanical constraints.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
