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Niobium-Titanium Alloy Sputtering Target (NbTi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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The target requires vacuum deposition infrastructure and controlled atmosphere to prevent oxidation during handling and storage. Deposited film adhesion and stoichiometry depend on substrate preparation and optimized sputtering parameters within stated power and pressure ranges.
- Environmental Sensitivity: Store the target in a dry, inert atmosphere to minimize surface oxidation and contamination prior to deposition.
- Processing Constraint: Operate DC magnetron sputtering at 3-15 W/cm² or RF sputtering at 1-5 W/cm² under 0.5-2.0 Pa argon to achieve stoichiometric transfer within ±2 at%.
- Failure Mode: Exceeding maximum power density may cause target cracking or delamination from the backing plate due to thermal stress.
- Compatibility Constraint: Confirm bonding type (indium or elastomer) and backing plate material (oxygen-free copper or CuCrZr) are compatible with the deposition system's cooling and mounting configuration.
Proper handling and installation prevent contamination and ensure optimal film quality during sputtering. Follow these steps to mount the target and prepare the deposition chamber.
Required Equipment: Cleanroom gloves, Isopropanol and lint-free wipes, Torque wrench with compatible bit
- Inspect the target
Inspect the target surface for visible defects, scratches, or oxidation before mounting. - Clean the target surface
Wipe the target surface gently with isopropanol and a lint-free wipe to remove particulate contamination. - Mount the target onto the backing plate
Secure the target onto the backing plate using the specified bonding method, ensuring full thermal contact. - Install the assembly in the sputtering system
Install the target assembly into the magnetron cathode, tightening mounting screws to the manufacturer's torque specification. - Evacuate the chamber
Evacuate the deposition chamber to base pressure below 1×10⁻⁴ Pa before introducing argon process gas. - Condition the target surface
Pre-sputter the target for 5-10 minutes at reduced power with the shutter closed to remove surface contaminants.
What are the recommended DC and RF power density ranges for the NbTi sputtering target to achieve optimal deposition rate and film uniformity?
For DC magnetron sputtering, the optimal power density range is 3-15 W/cm², yielding deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate under 0.5-2.0 Pa Ar atmosphere. For RF sputtering, the recommended range is 1-5 W/cm². Staying within these ranges ensures stoichiometric transfer within ±2 at% and minimizes target overheating.
What bonding and backing plate configurations are available for the NbTi target and how do they influence thermal management during sputtering?
The NbTi target offers indium bonding or elastomer bonding as optional bonding types, with backing plate options of oxygen-free copper or CuCrZr. These configurations are critical for efficient heat dissipation from the target during high-power sputtering, preventing thermal stress and maintaining deposition stability. The choice depends on the specific power density and duty cycle of the deposition system.
What are the purity specifications and impurity limits of the NbTi sputtering target and how do they affect deposited film performance?
The NbTi target is 99.9% (3N) pure with total metallic impurities <1000 ppm and oxygen + nitrogen content <200 ppm. These tight impurity limits minimize contamination in deposited films, improving electrical resistivity and adhesion strength (>15 MPa per ASTM D4541 pull-off). The fine grain size (≤50 µm) and high relative density (≥97%) further enhance film uniformity and mechanical properties.
The NbTi alloy sputtering target (99.9% purity, ≥97% density, ≤50 µm grain size) enables stoichiometric film transfer within ±2 at% under optimized DC/RF magnetron sputtering, with deposition rates of 10-80 nm/min and ±5% thickness uniformity across 100 mm substrates, though it requires careful power density management and bonding selection for reliable operation.
Positive
- High purity and density: 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm, combined with ≥97% relative density, minimizes film contamination and supports consistent resistivity and adhesion in deposited coatings.
- Controlled grain size for uniformity: Fine-grained microstructure (≤50 µm) and machined surface finish (Ra ≤0.8 µm) promote stable sputtering erosion and contribute to ±5% thickness uniformity across 100 mm substrates under optimized conditions.
Trade-offs
- Power density limits: Maximum power density is restricted to 3-15 W/cm² (DC) or 1-5 W/cm² (RF); exceeding these ranges risks target cracking or compromised film stoichiometry, requiring careful process control.
- Bonding and backing plate dependencies: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates are optional but must be matched to the deposition system's thermal and mechanical constraints to avoid delamination or thermal runaway.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
