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Molybdenum-Tungsten Alloy Sputtering Target (MoW (90:10 wt%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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Store the target in a dry, inert atmosphere to prevent surface oxidation and moisture adsorption. Handle with clean, powder-free gloves to avoid contamination that could degrade film adhesion and resistivity.
- Environmental Sensitivity: Exposure to ambient humidity or oxygen can form surface oxides that reduce sputtering yield and film purity.
- Contamination Risk: Fingerprints or organic residues on the target surface can introduce carbon or hydrocarbon contaminants into the deposited film.
- Mechanical Integrity: The fine-grained microstructure (≤50 µm) and ≥97% relative density minimize particle ejection during sputtering but require careful mounting to avoid cracking.
- Bonding Compatibility: Indium or elastomer bonding must be selected based on the backing plate material and maximum operating temperature of the deposition system.
Proper mounting and pre-sputtering conditioning ensure uniform film deposition and prevent target damage. Follow these steps to prepare the target for use in a DC or RF magnetron sputtering system.
Required Equipment: Powder-free clean gloves, Isopropanol and lint-free wipes, Vacuum-compatible mounting fixture
- Inspect the target surface
Inspect the target surface for visible scratches, pits, or discoloration before mounting. - Clean the target surface
Wipe the target surface with isopropanol and a lint-free cloth to remove any organic residues or dust. - Mount the target onto the backing plate
Mount the target onto the oxygen-free copper or CuCrZr backing plate using the specified bonding method, ensuring full thermal contact. - Install the assembly in the sputtering chamber
Install the bonded target assembly into the magnetron cathode, verifying that all electrical and cooling connections are secure. - Evacuate the chamber to base pressure
Evacuate the chamber to a base pressure below 5×10⁻⁶ Torr to remove residual moisture and gases. - Pre-sputter the target to remove surface oxides
Pre-sputter the target for 5–10 minutes at low power (2–3 W/cm² DC) with the shutter closed to remove any surface oxide layer. - Set the deposition parameters for the coating run
Set the deposition parameters to the desired power density (3–15 W/cm² DC or 1–5 W/cm² RF) and argon pressure (0.5–2.0 Pa) for the coating run.
What deposition rates and thickness uniformity can be achieved with the MoW (90:10 wt%) sputtering target under DC and RF magnetron sputtering conditions?
Under optimized conditions, the MoW (90:10) target achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. For DC sputtering, the recommended power density is 3-15 W/cm², and for RF sputtering, 1-5 W/cm², both under a 0.5-2.0 Pa Ar atmosphere.
What bonding and backing plate options are available for the MoW sputtering target, and how do they affect integration with different sputtering systems?
The target offers indium bonding or elastomer bonding as optional bonding types, with backing plate options including oxygen-free copper or CuCrZr alloy. Indium bonding provides high thermal conductivity for high-power applications, while elastomer bonding may be preferred for ease of target change. The choice depends on the sputtering system's cooling and mounting requirements.
What are the purity and density specifications of the MoW (90:10) sputtering target that ensure reliable performance in high-vacuum deposition processes?
The target has a purity of 99.95% (3N5) with total metallic impurities <500 ppm and O+N <100 ppm, and a relative density of ≥97% of theoretical. These specifications minimize outgassing and contamination in high-vacuum environments, which is critical for maintaining film quality and reproducibility.
The MoW (90:10 wt%) sputtering target from Atomfair offers 99.95% purity with fine grain size and high relative density, enabling controlled deposition rates of 10-80 nm/min and ±5% uniformity on 100 mm substrates via DC/RF magnetron sputtering, but requires careful selection of bonding and backing plate options and process optimization for stoichiometric transfer.
Positive
- High Purity & Low Impurity Levels: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination in deposited films.
- Optimized Sputtering Performance: DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar yields 10-80 nm/min deposition rates with ±5% thickness uniformity on 100 mm substrates.
Trade-offs
- Bonding & Backing Plate Selection Required: Options of indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate must be specified and confirmed compatible with system thermal management and sputtering configuration.
- Process Optimization Required: Stoichiometric transfer (±2 at%) achieved only under optimized sputtering conditions; fixed 90:10 wt% composition cannot be adjusted for different film stoichiometry needs.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
