|
Lanthanum-Nickel Alloy Sputtering Target (LaNi)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
|
|||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||
|
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
|
|||||||||||||||||||||||||||||||||||||
|
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
|
The target must be stored in a dry, inert atmosphere to prevent surface oxidation of the reactive LaNi alloy. Bonding integrity and film adhesion depend on substrate cleanliness and proper surface preparation prior to deposition.
- Environmental Sensitivity: Exposure to ambient moisture or oxygen can degrade the target surface, requiring storage under vacuum or argon purge.
- Bonding Constraint: Indium or elastomer bonding must be selected based on the sputtering system's cooling capacity and operating temperature range.
- Power Density Limit: Exceeding 15 W/cm² (DC) or 5 W/cm² (RF) can cause thermal cracking or delamination of the target from the backing plate.
- Substrate Adhesion Requirement: Deposited films achieve adhesion strength >15 MPa only on substrates that are ultrasonically cleaned and plasma-etched prior to coating.
This procedure covers mounting the LaNi target onto a magnetron cathode and performing a pre-sputter conditioning step. Proper installation and conditioning ensure stable deposition rates and film stoichiometry within ±2 at%.
Required Equipment: Magnetron sputtering system with DC/RF power supply, Argon gas supply (99.999% purity), Vacuum-compatible gloves
- Mount the target onto the cathode
Secure the LaNi target onto the magnetron cathode using the appropriate bonding method and ensure thermal contact with the cooling water circuit. - Evacuate the chamber
Pump the sputtering chamber to a base pressure below 5×10⁻⁴ Pa to remove residual moisture and oxygen. - Introduce process gas
Backfill the chamber with argon to a working pressure of 0.5–2.0 Pa for plasma ignition. - Pre-sputter the target surface
Apply DC power at 3–5 W/cm² for 10 minutes with the shutter closed to remove any oxidized surface layer. - Verify deposition rate
Open the shutter and deposit a test film on a witness substrate, then measure the rate using a quartz crystal microbalance.
How does the LaNi alloy composition tolerance (±2 at%) and 99.9% purity affect thin-film properties for hydrogen-storage and magneto-optical applications?
The ±2 at% stoichiometric transfer under optimized sputtering conditions ensures consistent film composition critical for hydrogen-storage and magneto-optical performance. The 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
What bonding and backing plate configurations are available for the LaNi sputtering target, and how do they influence thermal management under DC/RF magnetron sputtering?
The target offers indium bonding or elastomer bonding (optional) with oxygen-free copper or CuCrZr backing plates. Indium bonding provides superior thermal conductivity for high-power DC sputtering (up to 15 W/cm²), while elastomer bonding reduces thermal stress for RF processes (up to 5 W/cm²). The backing plate material choice affects heat dissipation and compatibility with specific sputtering systems.
What deposition rate and film uniformity can be expected from the LaNi sputtering target under typical DC/RF conditions?
Under 0.5-2.0 Pa Ar atmosphere with DC power density of 3-15 W/cm² or RF of 1-5 W/cm², the target achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate. Deposited films exhibit adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
The LaNi sputtering target provides 99.9% purity with low metallic and oxygen/nitrogen impurities, enabling repeatable stoichiometric film transfer via DC/RF magnetron sputtering. However, its relative density of ≥93% of theoretical and narrow power density windows impose operational constraints that must be accounted for during process design.
Positive
- High purity with low impurity levels: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination of deposited films, supporting consistent resistivity and adhesion.
- Optimized sputtering performance: Designed for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity on 100 mm substrates.
Trade-offs
- Constrained power density windows: Exceeding the specified 3-15 W/cm² (DC) or 1-5 W/cm² (RF) ranges risks target damage or degradation, requiring precise power control during deposition.
- Sub-theoretical density introduces porosity: Relative density ≥93% of theoretical leaves measurable porosity, which may affect long-term sputtering stability, target utilization, and film uniformity under extended use.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
