FeGa 82/18 Alloy Sputtering Target 99.95% 2 in ATOMFAIR®

$215.00

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Research-grade FeGa 82/18 at% sputtering target, 99.95% purity, 2 in dia x 0.125 in thick, for DC/RF magnetron deposition of magnetic films. Order now.

Iron-Gallium Alloy Sputtering Target (FeGa ( 82/18 at%))
Product Type: Metal alloy sputtering target
Research-grade laboratory product
Product Overview

Iron-Gallium Alloy Sputtering Target (FeGa ( 82/18 at%)) combines the FeGa ( 82/18 at%) alloy composition with a source-listed purity of 99.95% and a target size of 2 indiameter x 0.125 in.

The target is supplied for vacuum coating workflows using magnetron sputtering, vacuum plating and related deposition methods. Confirm the selected composition, dimensions, substrate system and quantity for the intended coating process.

Performance Features
  • FeGa ( 82/18 at%) alloy with nominal composition per chemical formula, enabling stoichiometric transfer to deposited films within ±2 at% under optimized sputtering conditions.
  • 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm, minimizing contamination and improving deposited film resistivity and adhesion.
  • Optimized for DC/RF magnetron sputtering at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere, achieving deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Suitable for soft magnetic, magnetostrictive and sensor thin films, with deposited films exhibiting adhesion strength >15 MPa (ASTM D4541 pull-off) on properly prepared substrates.
Technical Specifications
Parameter Specification / Available Values
Atomfair Model AF-FE-FEGS
Material / Formula FeGa ( 82/18 at%)
Purity 99.95%
Target Size 2 indiameter x 0.125 in
Relative Density ≥95% of theoretical
Grain Size ≤ 50 µm (fine-grained)
Deposition Method DC / RF Magnetron Sputtering
Max Power Density 3-15 W/cm² (DC) / 1-5 W/cm² (RF)
Bonding Type Indium bonding / Elastomer bonding (optional)
Backing Plate Oxygen-free copper / CuCrZr (optional)
Surface Finish Machined, Ra ≤ 0.8 µm
Thickness Tolerance ± 0.1 mm
Manufacturing Method Vacuum induction melting / Casting
Product Category Metal alloy sputtering target
PROCUREMENT CHECK: Confirm target specifications — purity, dimensions, composition ratio and bonding requirements — against your deposition system before ordering.
INQUIRY NOTE: Include the model number, target dimensions, purity grade and required quantity when requesting a quotation.
LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
Manufacturer: Atomfair LLC
Brand: ATOMFAIR®

This sputtering target requires DC/RF magnetron sputtering under controlled argon atmosphere with specific power density limits to achieve stoichiometric film transfer. Deposited film adhesion and purity depend on proper substrate preparation and selection of bonding type and backing plate compatible with the deposition system.

  • Sputtering Parameter Constraints: Operate the target at 3-15 W/cm² (DC) or 1-5 W/cm² (RF) under 0.5-2.0 Pa Ar atmosphere to achieve deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate.
  • Film Adhesion Requirement: Deposited films exhibit adhesion strength greater than 15 MPa per ASTM D4541 pull-off test only on properly prepared substrates.
  • Bonding and Backing Plate Compatibility: Select indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate based on the thermal and mechanical requirements of the deposition system.
  • Microstructural Constraints: Maintain grain size at or below 50 µm and relative density at or above 95% of theoretical to ensure uniform sputtering erosion and film quality.
  • Surface and Dimensional Tolerances: The target surface finish must be machined to Ra ≤ 0.8 µm and thickness tolerance within ±0.1 mm to ensure proper mounting and consistent deposition.

What is the significance of the 82/18 at% iron-gallium ratio in the FeGa sputtering target for magnetostrictive film deposition?

The 82/18 at% ratio is selected to optimize magnetostrictive and soft magnetic properties. Under optimized sputtering conditions, it enables stoichiometric transfer within ±2 at% to deposited films, yielding adhesion strength >15 MPa (ASTM D4541) on properly prepared substrates.

What bonding and backing plate options are available for the FeGa sputtering target, and how do they affect thermal management during deposition?

The target offers indium bonding or elastomer bonding as optional bonding methods, with backing plate options of oxygen-free copper or CuCrZr. Indium bonding provides high thermal conductivity for high-power DC sputtering up to 15 W/cm², while elastomer bonding is suited for lower power RF applications up to 5 W/cm². Confirm compatibility with your sputtering system's cooling and mounting configuration.

What sputtering parameters are recommended to achieve optimal film thickness uniformity and deposition rate with the FeGa (82/18) target?

For DC magnetron sputtering, use 3–15 W/cm² power density; for RF, 1–5 W/cm², both under 0.5–2.0 Pa Ar atmosphere. Under these conditions, deposition rates of 10–80 nm/min are achieved with ±5% thickness uniformity across a 100 mm substrate. The target's relative density ≥95% and fine grain size ≤50 µm support consistent sputtering performance.

This FeGa (82/18 at%) sputtering target offers 99.95% purity with fine grain size and ≥95% relative density, enabling stoichiometric film transfer under optimized DC/RF magnetron sputtering conditions for soft magnetic and magnetostrictive thin-film applications.

Positive

  • High purity with low impurities: 99.95% (3N5) purity with total metallic impurities <500 ppm and O+N <100 ppm minimizes contamination, improving deposited film resistivity and adhesion.
  • Optimized sputtering performance: Supports DC (3-15 W/cm²) and RF (1-5 W/cm²) magnetron sputtering under 0.5-2.0 Pa Ar, achieving 10-80 nm/min deposition rates with ±5% thickness uniformity across 100 mm substrates.

Trade-offs

  • Requires precise process control: Stoichiometric transfer within ±2 at% and optimal film properties depend on maintaining specified power density, Ar pressure, and substrate preparation; deviations may reduce film quality.
  • Bonding and backing plate options: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plates must be selected to match system thermal management and compatibility, adding procurement complexity.

Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.

To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

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