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Iron-Chromium Alloy Sputtering Target (FeCr)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This digital document defines the processing and handling constraints for the Atomfair FeCr sputtering target. It applies to DC/RF magnetron sputtering workflows requiring controlled power density, argon pressure, and substrate preparation.
- Maximum power density: Do not exceed the maximum rated power density of 15 W/cm² for DC sputtering or 5 W/cm² for RF sputtering.
- Argon process pressure: Maintain the argon working pressure between 0.5 and 2.0 Pa during deposition.
- Substrate preparation and adhesion: Ensure substrates are properly prepared before deposition to achieve adhesion strength greater than 15 MPa as measured by ASTM D4541.
- Target compatibility verification: Verify that the selected bonding type and backing plate are compatible with the deposition system and thermal load before use.
- Stoichiometric transfer: Run the sputtering process under optimized conditions to maintain deposited film composition within ±2 at% of the target composition.
This procedure describes initialization and processing of the FeCr alloy sputtering target in a vacuum deposition system. Follow these steps to establish the specified argon atmosphere and power conditions before deposition.
Required Equipment: DC/RF magnetron sputtering system
- Confirm target specifications
Confirm the target purity, dimensions, composition ratio, and bonding requirements against the deposition system before installation. - Verify target assembly configuration
Verify that the target assembly uses the selected indium or elastomer bonding and an oxygen-free copper or CuCrZr backing plate before installation. - Set argon process pressure
Evacuate the deposition chamber and backfill with argon to a process pressure of 0.5-2.0 Pa. - Apply sputtering power
Apply DC power density of 3-15 W/cm² or RF power density of 1-5 W/cm² to initiate sputtering. - Monitor deposition output
Monitor the deposition rate between 10 and 80 nm/min and verify thickness uniformity within ±5% across a 100 mm substrate.
What is the recommended deposition rate and thickness uniformity for the FeCr sputtering target?
Under optimized DC/RF magnetron sputtering conditions (3–15 W/cm² DC or 1–5 W/cm² RF, 0.5–2.0 Pa Ar atmosphere), the FeCr target achieves deposition rates of 10–80 nm/min with ±5% thickness uniformity across a 100 mm substrate. This performance is specified in the product technical data for the 2-inch diameter target.
What bonding and backing plate options are available for the FeCr target, and how do they affect system compatibility?
The target is offered with optional indium bonding or elastomer bonding, and backing plates of oxygen-free copper or CuCrZr. Indium bonding provides higher thermal conductivity for high-power sputtering, while elastomer bonding reduces contamination risk. The choice must be matched to the deposition system's thermal management and vacuum requirements.
How does the 99.9% purity of the FeCr target influence deposited film quality?
The 99.9% (3N) purity ensures total metallic impurities below 1000 ppm and O+N below 200 ppm, minimizing contamination in the sputtered film. This directly improves film resistivity, adhesion, and overall reliability for soft magnetic, magnetostrictive, and sensor thin-film applications.
The FeCr alloy sputtering target (99.9% purity, ≤50 µm grain size, ≥95% relative density) is engineered for DC/RF magnetron sputtering of soft magnetic and magnetostrictive thin films, offering deposition rates of 10–80 nm/min with ±5% thickness uniformity over 100 mm substrates. Its low metallic and oxygen-nitrogen impurity levels minimize film contamination, but the optional bonding and backing plate configurations require careful matching to the user's deposition system.
Positive
- High purity with low impurities: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm reduces contamination risk, improving deposited film resistivity and adhesion.
- Optimized sputtering performance: Specified DC (3–15 W/cm²) and RF (1–5 W/cm²) power density ranges under 0.5–2.0 Pa Ar yield deposition rates of 10–80 nm/min with ±5% thickness uniformity across 100 mm substrates, suitable for reproducible thin-film fabrication.
Trade-offs
- Requires pre-order specification check: Purity, dimensions, composition ratio, and bonding requirements must be confirmed against the deposition system before ordering to ensure compatibility and avoid process mismatch.
- Optional bonding and backing plate: Indium or elastomer bonding and oxygen-free copper or CuCrZr backing plate are optional, requiring additional user decisions and potentially affecting thermal management and target mounting.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
