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Iron-Cobalt Alloy Sputtering Target (FeTbCo)
Product Type: Metal alloy sputtering target
Research-grade laboratory product
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LABORATORY PROCUREMENT SUPPORT
INQUIRY: inquiry@atomfair.com
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Manufacturer: Atomfair LLC
Brand: ATOMFAIR®
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This sputtering target requires controlled vacuum deposition conditions to maintain stoichiometric transfer and film quality. Environmental exposure to moisture or oxygen may degrade the target surface and compromise deposition performance.
- Power Density Limit: Operate DC magnetron sputtering at 3-15 W/cm² or RF sputtering at 1-5 W/cm² to avoid target cracking or excessive heating.
- Atmosphere Requirement: Maintain an argon atmosphere at 0.5-2.0 Pa during deposition to achieve stable plasma and target erosion.
- Bonding Integrity: Select indium or elastomer bonding compatible with the backing plate material to ensure thermal contact and prevent delamination under sputtering power.
- Substrate Preparation: Prepare substrates to achieve adhesion strength greater than 15 MPa per ASTM D4541 to prevent film delamination.
This procedure covers mounting the target in a magnetron sputtering system and initiating deposition under controlled conditions. Proper handling and parameter setup are critical to avoid target damage and achieve uniform film thickness.
Required Equipment: Magnetron sputtering system with DC/RF power supply, Argon gas supply with flow controller, Vacuum chamber capable of base pressure below 1×10⁻⁴ Pa, Substrate holder with temperature control
- Mount Target
Secure the FeTbCo target onto the magnetron cathode using the appropriate bonding method and backing plate, ensuring full thermal contact. - Evacuate Chamber
Evacuate the deposition chamber to a base pressure below 1×10⁻⁴ Pa to minimize residual gas contamination. - Set Argon Flow
Introduce argon gas to achieve a working pressure of 0.5-2.0 Pa for stable plasma ignition. - Apply Power
Apply DC power at 3-15 W/cm² or RF power at 1-5 W/cm² to initiate sputtering, ramping gradually to avoid thermal shock. - Monitor Deposition
Monitor deposition rate between 10-80 nm/min and adjust power or pressure to maintain ±5% thickness uniformity across the substrate.
What is the composition tolerance of the FeTbCo sputtering target and how does it affect deposited film properties?
The FeTbCo target has a nominal composition per the chemical formula, with stoichiometric transfer within ±2 at% under optimized sputtering conditions. This tolerance ensures consistent magnetic and magneto-optical properties in deposited films. The 99.9% purity with total metallic impurities <1000 ppm and O+N <200 ppm further minimizes contamination, improving film resistivity and adhesion.
Which bonding and backing plate options are available for the 8-inch FeTbCo target and how do they affect thermal management?
The target offers indium bonding or elastomer bonding (optional) and oxygen-free copper or CuCrZr backing plates (optional). These options directly impact thermal conductivity and mechanical stability during high-power sputtering up to 15 W/cm² (DC) or 5 W/cm² (RF). Proper selection ensures efficient heat dissipation, prevents target cracking, and maintains deposition uniformity.
What are the recommended storage and handling conditions to maintain the 99.9% purity of the FeTbCo sputtering target?
Store the target in a dry, inert atmosphere to prevent oxidation and contamination. The fine-grained structure (≤50 µm) and machined surface finish (Ra ≤0.8 µm) are sensitive to particulate and moisture. Use clean, powder-free gloves and vacuum-sealed packaging when not in use to preserve the low oxygen and nitrogen content (<200 ppm) and ensure optimal film quality.
The FeTbCo alloy sputtering target (99.9% purity, 8 in diameter x 0.25 in) is designed for DC/RF magnetron sputtering, offering deposition rates of 10-80 nm/min with ±5% thickness uniformity. The high-purity composition minimizes contamination for magnetic and hydrogen-storage thin films, but requires optimized sputtering conditions and careful dimension verification for compatibility with existing systems.
Positive
- High purity with low contamination: 99.9% (3N) purity with total metallic impurities <1000 ppm and O+N <200 ppm minimizes contamination, improving deposited film resistivity and adhesion.
- Excellent deposition uniformity: Achieves deposition rates of 10-80 nm/min with ±5% thickness uniformity across a 100 mm substrate, suitable for magnetic, magneto-optical, and hydrogen-storage thin films with adhesion >15 MPa.
Trade-offs
- Requires optimized sputtering conditions: Stoichiometric transfer within ±2 at% is only achievable under optimized sputtering conditions, demanding careful process parameter tuning for consistent film composition.
- Must verify dimensions and bonding: Target size of 8 in diameter x 0.25 in and optional bonding types (indium/elastomer) require verification against the deposition system before ordering to ensure proper fit and integration.
Every advanced material, component, equipment, and instrument in our catalog is backed by rigorous testing. We maintain strict internal quality management frameworks and align with CE conformity metrics to deliver transparent, reproducible performance data via our public open-science repository.
To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.
Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD excl. heavy equipment). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).
